TN6725A_D27Z
TN6725A_D27Z Datasheet
TN6725A
| Part | Datasheet |
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TN6725A_D27Z |
TN6725A_D27Z (pdf) |
| Related Parts | Information |
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TN6725A |
TN6725A |
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TN6725A_D74Z |
TN6725A_D74Z |
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TN6725A_D26Z |
TN6725A_D26Z |
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TN6725A_D75Z |
TN6725A_D75Z |
| PDF Datasheet Preview |
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| TN6725A TN6725A Discrete Power & Signal Technologies TO-226 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced from Process See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCES Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Units V A °C NOTES 1 These ratings are based on a maximum junction temperature of 150°C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic TN6725A Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Units W mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation TN6725A NPN Darlington Transistor continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions |
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