TIS93_J35Z

TIS93_J35Z Datasheet

TIS93

Part	Datasheet
TIS93_J35Z	TIS93_J35Z (pdf)

Related Parts	Information
TIS93	TIS93

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TIS93 TIS93 PNP General Purpose Amplifier • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA. TO-92 Collector Base Emitter Absolute Maximum Ratings* TA=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TSTG Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaird. Value -40 -40 -800 - 55 ~ 150 NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Units V mA °C Electrical Characteristics TA=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR CEO Collector-Emitter Breakdown Voltage * V BR CBO Collector-Base Breakdown Voltage V BR EBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current On Characteristics IC = -10mA, IB = 0 IC = -100µA, IE = 0 IE = -100µA, IC = 0 VCB = -20V, IE = 0 VEB = -3.0V, IC = 0 DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE on Base-Emitter On Voltage * Pulse Test Pulse Width 300µs, Duty Cycle VCE = -2.0V, IC = -50mA IC = -50mA, IB = -5.0mA VCE = -2.0V, IC = -50mA

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TIS93

TIS93

PNP General Purpose Amplifier
• This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA.

TO-92

Collector Base Emitter

Absolute Maximum Ratings* TA=25°C unless otherwise noted

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current
- Continuous

TJ, TSTG

Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.

Value -40 -40 -800
- 55 ~ 150

NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Units V mA °C

Electrical Characteristics TA=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

V BR CEO Collector-Emitter Breakdown Voltage *

V BR CBO Collector-Base Breakdown Voltage

V BR EBO Emitter-Base Breakdown Voltage

ICBO

Collector Cut-off Current

IEBO

Emitter Cut-off Current

On Characteristics

IC = -10mA, IB = 0 IC = -100µA, IE = 0 IE = -100µA, IC = 0 VCB = -20V, IE = 0 VEB = -3.0V, IC = 0

DC Current Gain

VCE sat Collector-Emitter Saturation Voltage

VBE on Base-Emitter On Voltage
* Pulse Test Pulse Width 300µs, Duty Cycle

VCE = -2.0V, IC = -50mA IC = -50mA, IB = -5.0mA VCE = -2.0V, IC = -50mA

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Datasheet ID: TIS93_J35Z 634793