TIS75

TIS75 Datasheet

TIS75

Part	Datasheet
TIS75	TIS75 (pdf)

PDF Datasheet Preview
TIS75 TIS75 N-Channel General Purpose Amplifier • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process TO-92 Gate Source Drain Absolute Maximum Ratings * Ta=25°C unless otherwise noted Parameter Value Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Units V mA °C NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR GSS IGSS ID off Drain Cutoff Leakage Current VGS off Gate-Source Cutoff Voltage On Characteristics * IG = 1.0µA, VDS = 0 VGS = 15V, VDS = 0 VGS = 15V, VDS = 0, Ta = 100°C VDS = 15V, VGS = -10V VDS = 15V, VGS = -10V, Ta = 100°C VDS = 20V, ID = 4.0nA IDSS Zero-Gate Voltage Drain Current * rDS on Drain-Source On Resistance Small Signal Characteristics VDS = 15V, VGS = 0 VDS 0.1V, VGS = 0 Ciss Input Capacitance Crss Switching Characteristics

PDF Datasheet Preview

TIS75

TIS75

N-Channel General Purpose Amplifier
• This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers.
• Sourced from process

TO-92

Gate Source Drain

Absolute Maximum Ratings * Ta=25°C unless otherwise noted

Parameter

Value

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

TJ, TSTG

Operating and Storage Junction Temperature Range
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Units V mA °C

NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

V BR GSS IGSS

ID off

Drain Cutoff Leakage Current

VGS off Gate-Source Cutoff Voltage On Characteristics *

IG = 1.0µA, VDS = 0

VGS = 15V, VDS = 0 VGS = 15V, VDS = 0, Ta = 100°C

VDS = 15V, VGS = -10V VDS = 15V, VGS = -10V, Ta = 100°C

VDS = 20V, ID = 4.0nA

IDSS

Zero-Gate Voltage Drain Current *
rDS on

Drain-Source On Resistance

Small Signal Characteristics

VDS = 15V, VGS = 0 VDS 0.1V, VGS = 0

Ciss

Input Capacitance

Crss

Switching Characteristics

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived TIS75 Datasheet file may be downloaded here without warranties.

Datasheet ID: TIS75 634792