SSH70N10A
SSH70N10A Datasheet
SSH70N10A
| Part | Datasheet |
|---|---|
SSH70N10A |
SSH70N10A (pdf) |
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| Advanced Power MOSFET SSH70N10A Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175ΟC Operating Temperature Lower Leakage Current 10 µ A Max. VDS = 100V Lower RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25 ΟC Continuous Drain Current TC=100 ΟC Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC=25 ΟC Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds BVDSS = 100 V RDS on = ID = 70 A TO-3P 1.Gate Drain Source Value 100 70 280 +_ 20 1633 70 30 300 - 55 to +175 Units V A V mJ A mJ V/ns W/ ΟC Thermal Resistance Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -- Max. -40 Units ΟC /W 1999 Fairchild Semiconductor Corporation SSH70N10A N-CHANNEL POWER MOSFET Electrical Characteristics TC=25ΟC unless otherwise specified Symbol BVDSS VGS th IGSS |
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