SSD2007ASTF

SSD2007ASTF Datasheet

SSD2007A

Part	Datasheet
SSD2007ASTF	SSD2007ASTF (pdf)

Related Parts	Information
SSD2007ATF	SSD2007ATF

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Dual N-CHANNEL POWER MOSFET Extremely Lower RDS ON Improved Inductive Ruggedness Fast Switching Times Rugged Polysilicon Gate Cell Structure Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability Surface Mounding Package 8SOP SSD2007A 8 SOP S1 1 G1 2 S2 3 G2 4 Top View 8 D1 7 D1 6 D2 5 D2 D1,D2 D1,D2 G1 ,G2 ▼ ▼ ▼ S1 ,S2 N-Channel MOSFET Absolute Maximum Ratings Symbol VDSS VDGR VGS ID IDM TJ , TSTG Characteristic Drain-to-Source Voltage 1 Drain-Gate-to-Source Voltage Continuous Drain Current TA=25℃ Continuous Drain Current TA=100℃ Drain Current-Pulsed 2 Total Power Dissipation TA=25℃ TA=70℃ Operating and Storage Junction Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/16” from case for 5 seconds Value 50 ±20 - 55 to +150 Notes ; 1 TJ= 25℃ to 150℃ 2 Repetitive Rating Pulse Width Limited by Max. Junction Temperature Units V A V W SSD2007A Dual N-CHANNEL POWER MOSFET Electrical Characteristics TA=25℃ unless otherwise specified Symbol BVDSS VGS th IGSS IDSS IDON RDS on gfs td on tr td off tf Qg Qgs Qgd Drain-to-Source Leakage Current On-State Drain-Source Current 2 Static Drain-Source On-State Resistance 2 Forward Transconductance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain “Miller” Charge Min. Typ. Max. Units Test Condition 50 -- -- V VGS=0V,ID=250uA -- V VDS= VGS ,ID=250uA

PDF Datasheet Preview

Dual N-CHANNEL POWER MOSFET

Extremely Lower RDS ON Improved Inductive Ruggedness Fast Switching Times Rugged Polysilicon Gate Cell Structure Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability Surface Mounding Package 8SOP

SSD2007A
8 SOP

S1 1 G1 2

S2 3 G2 4

Top View
8 D1 7 D1
6 D2 5 D2

D1,D2

D1,D2

G1 ,G2 ▼
▼ ▼

S1 ,S2 N-Channel MOSFET

Absolute Maximum Ratings

Symbol VDSS VDGR VGS ID IDM

TJ , TSTG

Characteristic Drain-to-Source Voltage 1 Drain-Gate-to-Source Voltage Continuous Drain Current TA=25℃ Continuous Drain Current TA=100℃ Drain Current-Pulsed 2 Total Power Dissipation TA=25℃

TA=70℃ Operating and Storage Junction Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/16” from case for 5 seconds

Value 50 ±20
- 55 to +150

Notes ;
1 TJ= 25℃ to 150℃ 2 Repetitive Rating Pulse Width Limited by Max. Junction Temperature

Units V A V W

SSD2007A

Dual N-CHANNEL POWER MOSFET

Electrical Characteristics TA=25℃ unless otherwise specified

Symbol BVDSS VGS th

IGSS

IDSS

IDON

RDS on
gfs td on
tr td off
tf Qg Qgs Qgd

Drain-to-Source Leakage Current

On-State Drain-Source Current 2 Static Drain-Source On-State Resistance 2 Forward Transconductance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain “Miller” Charge

Min. Typ. Max. Units

Test Condition
50 -- -- V VGS=0V,ID=250uA
-- V VDS= VGS ,ID=250uA

More datasheets: M5134-000004-05KPG | M5134-000004-250PG | M5131-000005-050PG | M5144-000004-050PG | M5151-000005-05KPG | M5151-000005-050PG | M5131-000005-2K5PG | M5134-000004-100PG | M5154-000004-2K5PG | 11008

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Datasheet ID: SSD2007ASTF 634781