SI9955DY

SI9955DY Datasheet

Si9955DY

Part	Datasheet
SI9955DY	SI9955DY (pdf)

PDF Datasheet Preview
Si9955DY June 1999 Si9955DY* Dual N-Channel Enhancement Mode MOSFET These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications Battery switch Load switch Motor controls Features A, 50 V. RDS ON = VGS = 10 V RDS ON = VGS = V Low gate charge. Fast switching speed. High power and current handling capability. 0D[LPXP 5DWLQJV U 3DUDPHWHU W'66 W*66 D' 5DWLQJV 8QLWV 7KHUPDO &KDUDFWHULVWLFV 3DFNDJH 2XWOLQHV DQG 2UGHULQJ ,QIRUPDWLRQ "¶¶ 1999 Fairchild Semiconductor Corporation ! Si9955DY OHFWULFDO &KDUDFWHULVWLFV 3DUDPHWHU 7HVW &RQGLWLRQV 0LQ 0D[ 8QLWV 2II &KDUDFWHULVWLFV 7W9TT D9TT DBTTA DBTTS 2Q &KDUDFWHULVWLFV A ÃU pr µ 6 µ ° 8 µ 6 µ ° 8 WBTÃ2Ã WBTÃ2Ã WBTÃ2Ã W9TÃ2Ã &KDUDFWHULVWLFV rÃU 8 W9TÃ2Ã sÃ2Ã 6ZLWFKLQJ &KDUDFWHULVWLFV

PDF Datasheet Preview

Si9955DY

June 1999

Si9955DY*

Dual N-Channel Enhancement Mode MOSFET

These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Applications Battery switch Load switch Motor controls

Features A, 50 V. RDS ON = VGS = 10 V

RDS ON = VGS = V

Low gate charge. Fast switching speed. High power and current handling capability.
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1999 Fairchild Semiconductor Corporation
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Datasheet ID: SI9955DY 634777