SI9424DY

SI9424DY Datasheet

Si9424DY

Part	Datasheet
SI9424DY	SI9424DY (pdf)

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Si9424DY January 2001 Si9424DY Single P-Channel 2.5V Specified MOSFET This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • DC/DC converter • Load switch • Battery Protection • A, -20 V. RDS on = VGS = V RDS on = VGS = V. • Low gate charge 23nC typical . • Fast switching speed. • High performance trench technology for extremely low RDS ON . • High power and current handling capability. SO-8 G SS S Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation Note 1a Note 1a Note 1b Note 1c TJ, Tstg Operating and Storage Junction Temperature Range Ratings -20 ±10 -50 1 -55 to +150 Units Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Thermal Resistance, Junction-to-Case Note 1 °C/W °C/W Package Outlines and Ordering Information Device Marking Device Reel Size 9424 Si9424DY 13’’ Tape Width 12mm Quantity 2500 units 2001 Fairchild Semiconductor International Si9424DY Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = -250 µA, Referenced to 25°C VDS = -16 V, VGS = 0 V mV/°C IGSSF Gate-Body Leakage Current, Forward VGS = 10 V, VDS = 0 V 100 nA IGSSR -100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID on On-State Drain Current Forward Transconductance VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C

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Si9424DY

January 2001

Si9424DY

Single P-Channel 2.5V Specified MOSFET

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
• DC/DC converter
• Load switch
• Battery Protection
• A, -20 V. RDS on = VGS = V

RDS on = VGS = V.
• Low gate charge 23nC typical .
• Fast switching speed.
• High performance trench technology for extremely
low RDS ON .
• High power and current handling capability.

SO-8

G SS S

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Parameter

VDSS VGSS ID

Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous
- Pulsed Power Dissipation for Single Operation

Note 1a

Note 1a Note 1b Note 1c

TJ, Tstg

Operating and Storage Junction Temperature Range

Ratings
-20 ±10 -50 1 -55 to +150

Units

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Note 1a

Thermal Resistance, Junction-to-Case

Note 1
°C/W °C/W
Package Outlines and Ordering Information

Device Marking

Device

Reel Size
9424

Si9424DY
13’’

Tape Width 12mm

Quantity 2500 units
2001 Fairchild Semiconductor International

Si9424DY

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = -250 µA

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

ID = -250 µA, Referenced to 25°C VDS = -16 V, VGS = 0 V
mV/°C

IGSSF

Gate-Body Leakage Current, Forward VGS = 10 V, VDS = 0 V
100 nA

IGSSR
-100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static Drain-Source On-Resistance

ID on

On-State Drain Current

Forward Transconductance

VDS = VGS, ID = -250 µA

ID = -250 µA, Referenced to 25°C

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Datasheet ID: SI9424DY 634774