SGS13N60UFDTU

SGS13N60UFDTU Datasheet

SGS13N60UFD

Part	Datasheet
SGS13N60UFDTU	SGS13N60UFDTU (pdf)

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SGS13N60UFD SGS13N60UFD Ultra-Fast IGBT April 2001 IGBT Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. • High speed switching • Low saturation voltage VCE sat = V IC = 6.5A • High input impedance • CO-PAK, IGBT with FRD trr = 37ns typ. Application AC & DC Motor controls, general purpose inverters, robotics, servo controls TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES ICM 1 IF IFM PD TJ Tstg Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current TC = 25°C TC = 100°C Diode Continuous Forward Current Diode Maximum Forward Current TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25°C TC = 100°C Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Notes 1 Repetitive rating Pulse width limited by max. junction temperature SGS13N60UFD 600 ± 20 13 52 8 56 45 18 -55 to +150 -55 to +150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---- Max. Units V A W °C °C °C Units °C/W °C/W °C/W 2001 Fairchild Semiconductor Corporation SGS13N60UFD Electrical Characteristics of IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVCES ICES IGES

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SGS13N60UFD

SGS13N60UFD

Ultra-Fast IGBT

April 2001

IGBT

Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
• High speed switching
• Low saturation voltage VCE sat = V IC = 6.5A
• High input impedance
• CO-PAK, IGBT with FRD trr = 37ns typ.

Application

AC & DC Motor controls, general purpose inverters, robotics, servo controls

TO-220F

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VCES VGES

ICM 1 IF IFM PD

TJ Tstg

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current Collector Current Pulsed Collector Current

TC = 25°C TC = 100°C

Diode Continuous Forward Current Diode Maximum Forward Current

TC = 100°C

Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 25°C TC = 100°C

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

SGS13N60UFD 600 ± 20 13 52 8 56 45 18
-55 to +150 -55 to +150

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

Typ. ----

Max.

Units V A W °C °C °C

Units °C/W °C/W °C/W
2001 Fairchild Semiconductor Corporation

SGS13N60UFD

Electrical Characteristics of IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVCES ICES IGES

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Datasheet ID: SGS13N60UFDTU 634763