SGP6N60UFDTU

SGP6N60UFDTU Datasheet

SGP6N60UFD

Part	Datasheet
SGP6N60UFDTU	SGP6N60UFDTU (pdf)

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SGP6N60UFD SGP6N60UFD Ultra-Fast IGBT IGBT Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. • High speed switching • Low saturation voltage VCE sat = V IC = 3A • High input impedance • CO-PAK, IGBT with FRD trr = 35ns typ. AC & DC motor controls, general purpose inverters, robotics, and servo controls. TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES ICM 1 IF IFM PD TJ Tstg Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current TC = 25°C TC = 100°C Diode Continuous Forward Current Diode Maximum Forward Current TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25°C TC = 100°C Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient SGP6N60UFD 600 ± 20 6 3 25 4 25 30 12 -55 to +150 -55 to +150 Typ. ---- Max. Units V A W °C °C °C Units °C/W °C/W °C/W 2002 Fairchild Semiconductor Corporation SGP6N60UFD Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current

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SGP6N60UFD

SGP6N60UFD

Ultra-Fast IGBT

IGBT

Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
• High speed switching
• Low saturation voltage VCE sat = V IC = 3A
• High input impedance
• CO-PAK, IGBT with FRD trr = 35ns typ.

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

TO-220

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VCES VGES

ICM 1 IF IFM PD

TJ Tstg

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current Collector Current Pulsed Collector Current

TC = 25°C TC = 100°C

Diode Continuous Forward Current Diode Maximum Forward Current

TC = 100°C

Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 25°C TC = 100°C

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

SGP6N60UFD 600 ± 20 6 3 25 4 25 30 12
-55 to +150 -55 to +150

Typ. ----

Max.

Units V A W °C °C °C

Units °C/W °C/W °C/W
2002 Fairchild Semiconductor Corporation

SGP6N60UFD

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min. Typ. Max. Units

Off Characteristics

BVCES ICES IGES

Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current

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Datasheet ID: SGP6N60UFDTU 634758