SGM2N60UFTF
SGM2N60UFTF Datasheet
SGM2N60UF
| Part | Datasheet |
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SGM2N60UFTF |
SGM2N60UFTF (pdf) |
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| SGM2N60UF SGM2N60UF Ultrafast IGBT IGBT Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. • High speed switching • Low saturation voltage VCE sat = V IC = 1.2A • High input impedance AC & DC motor controls, general purpose inverters, robotics, and servo controls. SOT-223 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES ICM 1 PD TJ Tstg Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current TC = 25°C TC = 100°C Maximum Power Dissipation Ta = 25°C - Derate above 25°C Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Notes 1 Repetitive rating Pulse width limited by max. junction temperature SGM2N60UF 600 ± 20 10 -55 to +150 -55 to +150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient PCB Mount 2 Notes 2 Mounted on 1” squre PCB FR4 or G-10 Material Typ. -- Max. 60 Units V A W W/°C °C °C °C Units °C/W 2003 Fairchild Semiconductor Corporation SGM2N60UF Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics |
| More datasheets: ICS8430BYI-71LF | ICS8430BYI-71LFT | 62684-552100ALF | 62684-322100 | 62684-451100 | 62684-501100 | 62684-452100 | 62684-401100 | 62684-402100 | 62684-502100 |
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