SGH10N60RUFDTU

SGH10N60RUFDTU Datasheet

SGH10N60RUFD

Part	Datasheet
SGH10N60RUFDTU	SGH10N60RUFDTU (pdf)

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SGH10N60RUFD SGH10N60RUFD Short Circuit Rated IGBT IGBT Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies UPS and general inverters where short circuit ruggedness is a required feature. • Short circuit rated 10us TC = 100°C, VGE = 15V • High speed switching • Low saturation voltage VCE sat = V IC = 10A • High input impedance • CO-PAK, IGBT with FRD trr = 42ns typ. AC & DC motor controls, general purpose inverters, robotics, and servo controls. TO-3P Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES ICM 1 IF IFM TSC PD TJ Tstg Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current TC = 25°C TC = 100°C Diode Continuous Forward Current Diode Maximum Forward Current TC = 100°C Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 100°C TC = 25°C TC = 100°C Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient SGH10N60RUFD 600 ± 20 16 10 30 12 92 10 75 30 -55 to +150 -55 to +150 Typ. ---- Max. 40 Units V A us W °C °C °C Units °C/W °C/W °C/W 2002 Fairchild Semiconductor Corporation SGH10N60RUFD Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current

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SGH10N60RUFD

SGH10N60RUFD

Short Circuit Rated IGBT

IGBT

Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies UPS and general inverters where short circuit ruggedness is a required feature.
• Short circuit rated 10us TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage VCE sat = V IC = 10A
• High input impedance
• CO-PAK, IGBT with FRD trr = 42ns typ.

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

TO-3P

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VCES VGES

ICM 1 IF IFM TSC PD

TJ Tstg

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current Collector Current Pulsed Collector Current

TC = 25°C TC = 100°C

Diode Continuous Forward Current Diode Maximum Forward Current

TC = 100°C

Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 100°C TC = 25°C TC = 100°C

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

SGH10N60RUFD 600 ± 20 16 10 30 12 92 10 75 30
-55 to +150 -55 to +150

Typ. ----

Max. 40

Units V A us W °C °C °C

Units °C/W °C/W °C/W
2002 Fairchild Semiconductor Corporation

SGH10N60RUFD

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min. Typ. Max. Units

Off Characteristics

BVCES ICES IGES

Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current

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Datasheet ID: SGH10N60RUFDTU 634743