SGF23N60UFDM1TU

SGF23N60UFDM1TU Datasheet

SGF23N60UFD

Part	Datasheet
SGF23N60UFDM1TU	SGF23N60UFDM1TU (pdf)

PDF Datasheet Preview
SGF23N60UFD SGF23N60UFD Ultra-Fast IGBT June 2001 IGBT Fairchild's Insulated Gate Bipolar Transistor IGBT UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required. • High Speed Switching • Low Saturation Voltage VCE sat = V IC = 12A • High Input Impedance • CO-PAK, IGBT with FRD trr = 42ns typ. Application AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls TTOO--33PPFF Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES ICM 1 IF IFM PD TJ Tstg Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current TC = 25°C TC = 100°C Diode Continuous Forward Current Diode Maximum Forward Current TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25°C TC = 100°C Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient SGF23N60UFD 600 ± 20 23 12 92 12 92 75 30 -55 to +150 -55 to +150 Typ. ---- Max. 40 Units V A W °C °C °C Units °C/W °C/W °C/W 2001 Fairchild Semiconductor Corporation SGF23N60UFD Electrical Characteristics of IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics

PDF Datasheet Preview

SGF23N60UFD

SGF23N60UFD

Ultra-Fast IGBT

June 2001

IGBT

Fairchild's Insulated Gate Bipolar Transistor IGBT UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required.
• High Speed Switching
• Low Saturation Voltage VCE sat = V IC = 12A
• High Input Impedance
• CO-PAK, IGBT with FRD trr = 42ns typ.

Application

AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls

TTOO--33PPFF

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VCES VGES

ICM 1 IF IFM PD

TJ Tstg

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current Collector Current Pulsed Collector Current

TC = 25°C TC = 100°C

Diode Continuous Forward Current Diode Maximum Forward Current

TC = 100°C

Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 25°C TC = 100°C

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

SGF23N60UFD 600 ± 20 23 12 92 12 92 75 30
-55 to +150 -55 to +150

Typ. ----

Max. 40

Units V A W °C °C °C

Units °C/W °C/W °C/W
2001 Fairchild Semiconductor Corporation

SGF23N60UFD

Electrical Characteristics of IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min. Typ. Max. Units

Off Characteristics

More datasheets: 2000554 | 2000499 | 2000417 | 2000457 | 2000550 | 2000415 | 2000528 | 2000553 | 2000455 | 2000522

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived SGF23N60UFDM1TU Datasheet file may be downloaded here without warranties.

Datasheet ID: SGF23N60UFDM1TU 634740