SFP9Z34
SFP9Z34 Datasheet
SFP9Z34
| Part | Datasheet |
|---|---|
SFP9Z34 |
SFP9Z34 (pdf) |
| PDF Datasheet Preview |
|---|
| Advanced Power MOSFET SFP9Z34 n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n 175oC Opereting Temperature n Extended Safe Operating Area n Lower Leakage Current -10 µA Max. VDS = -60V n Low RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25oC Continuous Drain Current TC=100oC Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC=25oC Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds BVDSS = -60 V RDS on = ID = -18 A TO-220 1.Gate Drain Source Value -60 -18 -72 ±30 555 -18 82 - 55 to +175 Units V A V mJ A mJ V/ns W/oC Thermal Resistance Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -- Max. Units oC/W SFR/U9034 P-CHANNEL POWER MOSFET Electrical Characteristics TC=25oC unless otherwise specified Symbol BVDSS VGS th IGSS |
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