SFH154

SFH154 Datasheet

SFH154

Part	Datasheet
SFH154	SFH154 (pdf)

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Advanced Power MOSFET SFH154 s Avalanche Rugged Technology s Rugged Gate Oxide Technology s Lower Input Capacitance s Improved Gate Charge s Extended Safe Operating Area s 150oC Operating Temperature s Lower Leakage Current 10 µA Max. VDS = 150V s Lower RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25oC Continuous Drain Current TC=100oC Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC=25oC Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8＂ from case for 5-seconds Thermal Resistance Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient BVDSS = 150 V RDS on = ID = 34 A TO-3P 1.Gate Drain Source Value 150 34 136 ±30 867 34 204 - 55 to +150 Units V A V mJ A mJ V/ns W/oC Typ. -- Max. Units oC/W SFH154 N-CHANNEL POWER MOSFET Electrical Characteristics TC=25℃ unless otherwise specified Symbol BVDSS VGS th IGSS

PDF Datasheet Preview

Advanced Power MOSFET

SFH154
s Avalanche Rugged Technology s Rugged Gate Oxide Technology s Lower Input Capacitance s Improved Gate Charge s Extended Safe Operating Area s 150oC Operating Temperature s Lower Leakage Current 10 µA Max. VDS = 150V s Lower RDS ON Typ.

Absolute Maximum Ratings

Symbol VDSS ID

IDM VGS EAS IAR EAR dv/dt

TJ , TSTG

Characteristic

Drain-to-Source Voltage

Continuous Drain Current TC=25oC Continuous Drain Current TC=100oC

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation TC=25oC

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8＂ from case for 5-seconds

Thermal Resistance

Characteristic Junction-to-Case

Case-to-Sink Junction-to-Ambient

BVDSS = 150 V RDS on = ID = 34 A

TO-3P
1.Gate Drain Source

Value 150 34 136 ±30 867 34 204
- 55 to +150

Units V

A V mJ A mJ V/ns W/oC

Typ. --

Max.

Units oC/W

SFH154

N-CHANNEL POWER MOSFET

Electrical Characteristics TC=25℃ unless otherwise specified

Symbol BVDSS

VGS th

IGSS

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Datasheet ID: SFH154 634711