RURG30100

RURG30100 Datasheet

RURG30100

Part	Datasheet
RURG30100	RURG30100 (pdf)

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Data Sheet January 2002 RURG30100 30A, 1000V Ultrafast Diode The RURG30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Formerly developmental type TA09904. Ordering Information PACKAGE BRAND RURG30100 TO-247 RURG30100 NOTE When ordering, use the entire part number. • Switching Power Supplies • Power Switching Circuits • General Purpose Packaging JEDEC STYLE 2 LEAD TO-247 CATHODE BOTTOM SIDE METAL ANODE CATHODE Absolute Maximum Ratings TC = 25oC, Unless Otherwise TC = 120oC Repetitive Peak Surge Current IFRM Square Wave, 20kHz Nonrepetitive Peak Surge Current IFSM Halfwave, 1 Phase, 60Hz Maximum Power Dissipation PD Avalanche Energy See Figures 7 and 8 EAVL Operating and Storage Temperature TSTG, TJ RURG30100 1000 30 125 30 -65 to 175 UNITS V A W mJ oC 2002 Fairchild Semiconductor Corporation RURG30100 Electrical TC = 25oC, Unless Otherwise TEST CONDITION UNITS IF = 30A IF = 30A, TC = 150oC VR = 1000V VR = 1000V, TC = 150oC IF = 1A, dIF/dt = 100A/µs IF = 30A, dIF/dt = 100A/µs IF = 30A, dIF/dt = 100A/µs IF = 30A, dIF/dt = 100A/µs oC/W DEFINITIONS D = duty cycle. Typical Performance Curves TJ = 175oC TJ = 175oC 10 TJ = 100oC TJ = 25oC VF, FORWARD VOLTAGE DROP V FIGURE FORWARD CURRENT vs FORWARD VOLTAGE TJ = 100oC TJ = 25oC 1000 2002 Fairchild Semiconductor Corporation

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Data Sheet

January 2002

RURG30100
30A, 1000V Ultrafast Diode

The RURG30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

This device is intended for use as a freewheeling/clamping diode and in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors.

Formerly developmental type TA09904.
Ordering Information

PACKAGE

BRAND

RURG30100

TO-247

RURG30100
NOTE When ordering, use the entire part number.
• Switching Power Supplies
• Power Switching Circuits
• General Purpose

Packaging

JEDEC STYLE 2 LEAD TO-247

CATHODE BOTTOM

SIDE METAL

ANODE CATHODE

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

TC = 120oC Repetitive Peak Surge Current IFRM

Square Wave, 20kHz Nonrepetitive Peak Surge Current IFSM

Halfwave, 1 Phase, 60Hz Maximum Power Dissipation PD Avalanche Energy See Figures 7 and 8 EAVL Operating and Storage Temperature TSTG, TJ

RURG30100 1000 30
125 30 -65 to 175

UNITS V A

W mJ oC
2002 Fairchild Semiconductor Corporation

RURG30100

Electrical TC = 25oC, Unless Otherwise

TEST CONDITION

UNITS

IF = 30A

IF = 30A, TC = 150oC

VR = 1000V

VR = 1000V, TC = 150oC

IF = 1A, dIF/dt = 100A/µs

IF = 30A, dIF/dt = 100A/µs

IF = 30A, dIF/dt = 100A/µs

IF = 30A, dIF/dt = 100A/µs
oC/W

DEFINITIONS

D = duty cycle.

Typical Performance Curves

TJ = 175oC

TJ = 175oC 10

TJ = 100oC TJ = 25oC

VF, FORWARD VOLTAGE DROP V

FIGURE FORWARD CURRENT vs FORWARD VOLTAGE

TJ = 100oC

TJ = 25oC
1000
2002 Fairchild Semiconductor Corporation

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Datasheet ID: RURG30100 634694