RMPA5251

RMPA5251 Datasheet

RMPA5251

Part	Datasheet
RMPA5251	RMPA5251 (pdf)

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RMPA5251 October 2004 RMPA5251 GHz InGaP HBT Linear Power Amplifier The RMPA5251 power amplifier is designed for high performance WLAN applications in the to and to GHz frequency bands. The low profile 16 pin 3 x 3 x mm package with internal matching on both input and output to minimizes next level PCB space and allows for simplified integration. The on-chip detector provides power sensing capability while the logic control provides power saving shutdown options. The PA’s low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor HBT technology. • to GHz Operation • 27dB small signal gain • 26dBm output power 1dB compression • EVM at 18.0dBm modulated power out • 3.3V single positive supply operation • Adjustable bias current operation • Two power saving shutdown options bias and logic control • Integrated power detector with >18dB dynamic range • Low profile 16 pin 3 x 3 x mm standard QFN leadless package • Internally matched to • Minimal external components Device • Optimized for use in IEEE 802.11a WLAN applications Electrical Characteristics1,3 802.11a OFDM Modulation with 176ms burst time, 100ms idle time 54Mbps Data Rate, MHz Bandwidth Parameter Frequency 10 Minimum Typical Supply Voltage Gain Total Current 18dBm POUT Total Current 19dBm POUT EVM 18dBm POUT2 EVM 19dBm POUT2 Detector Output 19dBm POUT Detector Threshold4 POUT Spectral Mask Compliance5, 6 250 260 450 Electrical Characteristics1 Single Tone Maximum Minimum Typical 28 240 250 500 Maximum Unit GHz V dB mA % % mV dBm Parameter Frequency 10 Supply Voltage Gain 7 Total Quiescent Current7, 11 Minimum Typical Maximum

PDF Datasheet Preview

RMPA5251

October 2004

RMPA5251

GHz InGaP HBT Linear Power Amplifier

The RMPA5251 power amplifier is designed for high performance WLAN applications in the to and to GHz frequency bands. The low profile 16 pin 3 x 3 x mm package with internal matching on both input and output to minimizes next level PCB space and allows for simplified integration. The on-chip detector provides power sensing capability while the logic control provides power saving shutdown options. The PA’s low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor HBT technology.
• to GHz Operation
• 27dB small signal gain
• 26dBm output power 1dB compression
• EVM at 18.0dBm modulated power out
• 3.3V single positive supply operation
• Adjustable bias current operation
• Two power saving shutdown options bias and logic control
• Integrated power detector with >18dB dynamic range
• Low profile 16 pin 3 x 3 x mm standard QFN leadless package
• Internally matched to
• Minimal external components

Device
• Optimized for use in IEEE 802.11a WLAN applications

Electrical Characteristics1,3 802.11a OFDM

Modulation with 176ms burst time, 100ms idle time 54Mbps Data Rate, MHz Bandwidth

Parameter Frequency 10

Minimum Typical

Supply Voltage

Gain

Total Current 18dBm POUT

Total Current 19dBm POUT EVM 18dBm POUT2 EVM 19dBm POUT2

Detector Output 19dBm POUT Detector Threshold4

POUT Spectral Mask Compliance5, 6
250 260 450

Electrical Characteristics1 Single Tone

Maximum

Minimum

Typical
28 240 250 500

Maximum

Unit GHz

V dB mA % % mV dBm

Parameter Frequency 10

Supply Voltage Gain 7 Total Quiescent Current7, 11

Minimum

Typical

Maximum

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Datasheet ID: RMPA5251 634691