RMPA2455

RMPA2455 Datasheet

RMPA2455 GHz 1 Watt InGaP HBT Linear Power

Part	Datasheet
RMPA2455	RMPA2455 (pdf)

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RMPA2455 GHz 1 Watt InGaP HBT Linear Power January 2005 RMPA2455 GHz 1 Watt InGaP HBT Linear Power • 30 dB small signal gain • 30 dBm output power 1 dB compression • 3% EVM at 22 dBm modulated power out • V positive collector supply operation • Two power saving shutdown options bias and logic control • Integrated power detector with 20 dB dynamic range • Low 16 pin 3 x 3 x mm leadless package • Internally matched to and DC blocked RF input/output • Optimized for use in 802.11b/g Access Point applications The RMPA2455 power amplifier is designed for high performance WLAN access point applications in the GHz frequency band. The low profile 16 pin 3 x 3 x mm package with internal matching on both input and output to minimizes next level PCB space and allows for simplified integration. The on-chip detector provides power sensing capability while the logic control provides power saving shutdown options. The PA’s low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor HBT technology. Device Electrical Characteristics1 802.11g OFDM Modulation with 176 ms burst time, 100 ms idle time 54 Mbps Data Rate, MHz Bandwidth Parameter Frequency Collector Supply Voltage Mirror Supply Voltage Gain Total Current 22dBm POUT EVM 22dBm POUT2 Detector Output 22dBm POUT Detector Threshold3 30 195 960 4 Notes VC1, VC2 = Volts, VM12 = 3.3V, TA = 25°C, PA is constantly biased, system. Percentage includes system noise of EVM = POUT measured at PIN corresponding to power detection threshold. Units GHz V dB mA % mV 2004 Fairchild Semiconductor Corporation RMPA2455 GHz 1 Watt InGaP HBT Linear Power Electrical Characteristics1 Single Tone Parameter Frequency Collector Supply Voltage Mirror Supply Voltage Gain Total Quiescent Current Bias Current at pin VM122 P1dB Compression Standby Current3 Shutdown Current VM12 = 0V Input Return Loss Output Return Loss Detector Output at P1dB Comp Detector POUT Threshold7 2nd Harmonic Output at P1dB 3rd Harmonic Output at P1dB Logic Shutdown Control VL Device Off, Logic High Input Device On, Logic Low Input Logic Current Turn-on Time4 Turn-off Time Spurious Stability 5 30 140 17 30 12 10 4 6 -40 -40 Units GHz V dB mA dBm mA µA dB V dBm dBc Absolute Ratings6 VC1, VC2 IC1, IC2 VM12 VL PIN TCASE TSTG Parameter Positive Supply Voltage Supply Current IC1 IC2 Positive Bias Voltage Logic Voltage RF Input Power Case Operating Temperature Storage Temperature Notes VC1,VC2 = 5.0V, VM12 = 3.3V, TC = 25°C, system. Mirror bias current is included in the total quiescent current. VL is set to Input Logic Level High for PA Off operation. Measured from Device On signal turn on Logic Low to the point where RF POUT stabilizes to 0.5dB. Load VSWR is set to 8:1 and the angle is varied 360 degrees. POUT = -30dBm to P1dB. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values POUT measured at PIN corresponding to power detection threshold. Ratings 120 700 5 10 -40 to +85 -55 to +150 Units mA V dBm °C °C RMPA2455 GHz 1 Watt InGaP HBT Linear Power Functional Block Diagram VDET VM12 VL 1 RF IN 2 RF IN 3

PDF Datasheet Preview

RMPA2455 GHz 1 Watt InGaP HBT Linear Power

January 2005

RMPA2455 GHz 1 Watt InGaP HBT Linear Power
• 30 dB small signal gain
• 30 dBm output power 1 dB compression
• 3% EVM at 22 dBm modulated power out
• V positive collector supply operation
• Two power saving shutdown options bias and logic control
• Integrated power detector with 20 dB dynamic range
• Low 16 pin 3 x 3 x mm leadless package
• Internally matched to and DC blocked RF input/output
• Optimized for use in 802.11b/g Access Point applications

The RMPA2455 power amplifier is designed for high performance WLAN access point applications in the GHz frequency band. The low profile 16 pin 3 x 3 x mm package with internal matching on both input and output to minimizes next level PCB space and allows for simplified integration. The on-chip detector provides power sensing capability while the logic control provides power saving shutdown options. The PA’s low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor HBT technology.

Device

Electrical Characteristics1 802.11g OFDM Modulation
with 176 ms burst time, 100 ms idle time 54 Mbps Data Rate, MHz Bandwidth

Parameter

Frequency Collector Supply Voltage Mirror Supply Voltage Gain Total Current 22dBm POUT EVM 22dBm POUT2 Detector Output 22dBm POUT Detector Threshold3
30 195 960 4

Notes VC1, VC2 = Volts, VM12 = 3.3V, TA = 25°C, PA is constantly biased, system. Percentage includes system noise of EVM = POUT measured at PIN corresponding to power detection threshold.

Units

GHz V dB mA % mV
2004 Fairchild Semiconductor Corporation

RMPA2455 GHz 1 Watt InGaP HBT Linear Power

Electrical Characteristics1 Single Tone

Parameter

Frequency Collector Supply Voltage Mirror Supply Voltage Gain Total Quiescent Current Bias Current at pin VM122 P1dB Compression Standby Current3 Shutdown Current VM12 = 0V Input Return Loss Output Return Loss Detector Output at P1dB Comp Detector POUT Threshold7 2nd Harmonic Output at P1dB 3rd Harmonic Output at P1dB Logic

Shutdown Control VL Device Off, Logic High Input Device On, Logic Low Input Logic Current Turn-on Time4 Turn-off Time Spurious Stability 5
30 140 17 30 12 10 4 6 -40 -40

Units

GHz V dB mA
dBm mA µA dB V dBm dBc

Absolute Ratings6

VC1, VC2 IC1, IC2

VM12 VL PIN TCASE TSTG

Parameter

Positive Supply Voltage Supply Current

IC1 IC2 Positive Bias Voltage Logic Voltage RF Input Power Case Operating Temperature Storage Temperature

Notes VC1,VC2 = 5.0V, VM12 = 3.3V, TC = 25°C, system. Mirror bias current is included in the total quiescent current. VL is set to Input Logic Level High for PA Off operation. Measured from Device On signal turn on Logic Low to the point where RF POUT stabilizes to 0.5dB. Load VSWR is set to 8:1 and the angle is varied 360 degrees. POUT = -30dBm to P1dB. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values POUT measured at PIN corresponding to power detection threshold.

Ratings
120 700
5 10 -40 to +85 -55 to +150

Units
mA V dBm °C °C

RMPA2455 GHz 1 Watt InGaP HBT Linear Power

Functional Block Diagram

VDET

VM12

VL 1 RF IN 2 RF IN 3

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Datasheet ID: RMPA2455 634688