RMPA2265

RMPA2265 Datasheet

RMPA2265 Dual Band WCDMA Power Edge Power Module 1850 to 1910 MHz and 1920 to 1980 MHz

Part	Datasheet
RMPA2265	RMPA2265 (pdf)

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RMPA2265 Dual Band WCDMA Power Edge Power Module 1850 to 1910 MHz and 1920 to 1980 MHz April 2005 RMPA2265 Dual Band WCDMA Power Edge Power Module 1850 to 1910 MHz and 1920 to 1980 MHz • Single positive-supply operation and low power and shutdown modes • 42% WCDMA at +28 dBm average output power MHz • 39% WCDMA at dBm average output power MHz • Meets UMTS/WCDMA performance requirements in both UMTS bands • Meets HSDPA performance requirements • Compact Lead-free compliant LCC x mm nominal • Internally matched to 50 Ohms and DC blocked RF input/output Device The RMPA2265 power module PAM is designed for WCDMA/HSDPA applications in both the and 1980 MHz bands. The 2 stage PAM is internally matched to 50 Ohms to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added and excellent linearity are achieved using Fairchild’s InGaP/GaAs Heterojunction Bipolar Transistor HBT process. Functional Block Diagram Top View Vcc1 1 RF IN 2 Vmode 3 Vref 4 MMIC Input Match DC Bias Control 8 Vcc2 Output Match 7 RF OUT 6 GND 5 GND paddle ground on package bottom 2005 Fairchild Semiconductor Corporation RMPA2265 Dual Band WCDMA Power Edge Power Module 1850 to 1910 MHz and 1920 to 1980 MHz Absolute Ratings 1 Parameter Ratings Units VCC1, VCC2 Vref Vmode PIN TSTG Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature +10 -55 to +150 V dBm °C Note No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. Electrical Characteristics 1920 to 1980 MHz 1 Parameter Operating Frequency WCDMA Operation Min Typ Max Units

PDF Datasheet Preview

RMPA2265 Dual Band WCDMA Power Edge Power Module 1850 to 1910 MHz and 1920 to 1980 MHz

April 2005

RMPA2265 Dual Band WCDMA Power Edge Power Module 1850 to 1910 MHz and 1920 to 1980 MHz
• Single positive-supply operation and low power and shutdown modes
• 42% WCDMA at +28 dBm average output power MHz
• 39% WCDMA at dBm average output power MHz
• Meets UMTS/WCDMA performance requirements in both UMTS bands
• Meets HSDPA performance requirements
• Compact Lead-free compliant LCC
x mm nominal
• Internally matched to 50 Ohms and DC blocked RF
input/output

Device

The RMPA2265 power module PAM is designed for WCDMA/HSDPA applications in both the and 1980 MHz bands. The 2 stage PAM is internally matched to 50 Ohms to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added and excellent linearity are achieved using Fairchild’s InGaP/GaAs Heterojunction Bipolar Transistor HBT process.

Functional Block Diagram

Top View

Vcc1 1 RF IN 2 Vmode 3

Vref 4

MMIC

Input Match

DC Bias Control
8 Vcc2

Output Match
7 RF OUT
6 GND
5 GND
paddle ground on package bottom
2005 Fairchild Semiconductor Corporation

RMPA2265 Dual Band WCDMA Power Edge Power Module 1850 to 1910 MHz and 1920 to 1980 MHz

Absolute Ratings 1

Parameter

Ratings

Units

VCC1, VCC2 Vref Vmode PIN TSTG

Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature
+10 -55 to +150

V dBm °C

Note No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.

Electrical Characteristics 1920 to 1980 MHz 1

Parameter

Operating Frequency

WCDMA Operation

Min Typ Max Units

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Datasheet ID: RMPA2265 634686