RMPA1765

RMPA1765 Datasheet

RMPA1765 K-PCS, CDMA, CDMA2000-1X and WCDMA Power Edge Power Module

Part	Datasheet
RMPA1765	RMPA1765 (pdf)

PDF Datasheet Preview
RMPA1765 K-PCS, CDMA, CDMA2000-1X and WCDMA Power Edge Power Module February 2005 RMPA1765 K-PCS, CDMA, CDMA2000-1X and WCDMA Power Edge Power Module • Single positive-supply operation and low power and shutdown modes • 38% CDMA/WCDMA at +28 dBm average output power • Compact lead-free compliant LCC package3.0 x mm with industry standard pinout • Internally matched to 50 Ohms and DC blocked RF input/output. • Meets CDMA2000-1XRTT/WCDMA performance requirements Device The RMPA1765 power module PAM is designed for Korean CDMA, CDMA2000-1X and WCDMA personal communications system PCS applications. The 2 stage PAM is internally matched to 50 Ohms to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added and excellent linearity are achieved using Fairchild RF’s InGaP Heterojunction Bipolar Transistor HBT process. Functional Block Diagram PA MODULE Top View Vcc1 1 MMIC RF IN Input Match Vmode 3 DC Bias Control Vref 4 8 Vcc2 Output Match RF OUT 6 GND 5 GND paddle ground on package bottom 2005 Fairchild Semiconductor Corporation RMPA1765 K-PCS, CDMA, CDMA2000-1X and WCDMA Power Edge Power Module Absolute Ratings1 Parameter Value Units Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature Vcc1, Vcc2 Vref Vmode Pin Tstg +10 -55 to +150 V dBm °C Note No permanent damage with one parameter set at extreme limit. Other parameters set to typical values. Electrical Characteristics1 Parameter Operating Frequency CDMA Operation Small-Signal Gain Power Gain

PDF Datasheet Preview

RMPA1765 K-PCS, CDMA, CDMA2000-1X and WCDMA Power Edge Power Module

February 2005

RMPA1765 K-PCS, CDMA, CDMA2000-1X and WCDMA Power Edge Power Module
• Single positive-supply operation and low power and shutdown modes
• 38% CDMA/WCDMA at +28 dBm average output power
• Compact lead-free compliant LCC package3.0 x mm with industry standard pinout
• Internally matched to 50 Ohms and DC blocked RF input/output.
• Meets CDMA2000-1XRTT/WCDMA performance requirements

Device

The RMPA1765 power module PAM is designed for Korean CDMA, CDMA2000-1X and WCDMA personal communications system PCS applications. The 2 stage PAM is internally matched to 50 Ohms to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added and excellent linearity are achieved using Fairchild RF’s InGaP Heterojunction Bipolar Transistor HBT process.

Functional Block Diagram

PA MODULE

Top View

Vcc1 1

MMIC

RF IN

Input Match

Vmode 3

DC Bias Control

Vref 4
8 Vcc2

Output Match

RF OUT
6 GND
5 GND
paddle ground on package bottom
2005 Fairchild Semiconductor Corporation

RMPA1765 K-PCS, CDMA, CDMA2000-1X and WCDMA Power Edge Power Module

Absolute Ratings1

Parameter

Value

Units

Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature

Vcc1, Vcc2 Vref

Vmode Pin Tstg
+10 -55 to +150

V dBm °C

Note No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.

Electrical Characteristics1

Parameter

Operating Frequency CDMA Operation Small-Signal Gain Power Gain

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Datasheet ID: RMPA1765 634681