RMBA19500

RMBA19500 Datasheet

RMBA19500

Part	Datasheet
RMBA19500	RMBA19500 (pdf)

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RMBA19500 May 2004 RMBA19500 PCS 2 Watt Linear GaAs MMIC Power Amplifier The RMBA19500 is a highly linear Power Amplifier. The circuit uses our pHEMT process. It has been designed for use as a driver stage for PCS base stations, or as the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high linearity requirements for CDMA operation. • 2 Watt Linear output power at 36dBc ACPR1 for CDMA operation • Small signal gain of 30dB typ. • Small outline SMD package Device Absolute Ratings Symbol Vd Vg PRF TC TS Parameter Drain Supply Voltage1 Gate Supply Voltage RF Input Power from source Operating Case Temperature Range Storage Temperature Range Note Only under quiescent RF applied. Ratings +10 -5 +5 -30 to +85 -40 to +100 Units V dBm °C °C 2003 Fairchild Semiconductor Corporation RMBA19500 Electrical Characteristics2 Parameter Frequency Range Gain Small Signal Over Gain Variation Over Frequency Range Over Temperature Range Noise Figure Linear Output Power for CDMA3 OIP34 PAE 33dBm Pout Input VSWR Drain Voltage Vdd Gate Voltage VG1, 2 and VG3 5 Quiescent Currents IDQ1, 2 and IDQ3 5 Thermal Resistance Channel to Case RJC Min 1930 43 24 2:1 180, 445 11 Max 1990 Units MHz dB dB dBm % V mA °C/W Notes VDD = 7.0V, TC = 25°C. Part mounted on evaluation board with input and output matching to 9 Channel Forward Link QPSK Source 1.23Mbps modulation rate. CDMA ACPR1 is measured using the ratio of the average power within the 1.23MHz channel at band center to the average power within a 30KHz bandwidth at an 885KHz offset. Minimum CDMA output power is met with ACPR1 > 36dBc. OIP3 specifications are achieved for power output levels of 27 and 30dBm per tone with tone spacing of 1.25MHz at band-center with adjusted supply and bias conditions of Vdd = 6.5V and IdqTotal = 625mA see Note VG1,2 and VG3 must be individually adjusted to achieve IDQ1,2 and IDQ3. A single VGG bias supply adjusted to achieve IDQTOTAL = 625mA can be used with nearly equivalent performance. Values for IDQ1,2 and IDQ3 shown have been optimized for CDMA operation. IDQ1, 2 and IDQ3 or IDQTOTAL can be adjusted to optimize the linearity of the amplifier for other modulation systems. The device requires external input and output matching to as shown in Figure 3 and the Parts List. 2003 Fairchild Semiconductor Corporation RMBA19500 Application Information CAUTION THIS IS AN ESD SENSITIVE DEVICE

PDF Datasheet Preview

RMBA19500

May 2004

RMBA19500

PCS 2 Watt Linear GaAs MMIC Power Amplifier

The RMBA19500 is a highly linear Power Amplifier. The circuit uses our pHEMT process. It has been designed for use as a driver stage for PCS base stations, or as the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high linearity requirements for CDMA operation.
• 2 Watt Linear output power at 36dBc ACPR1 for CDMA operation
• Small signal gain of 30dB typ.
• Small outline SMD package

Device

Absolute Ratings

Symbol Vd Vg PRF TC TS

Parameter Drain Supply Voltage1 Gate Supply Voltage RF Input Power from source Operating Case Temperature Range Storage Temperature Range

Note Only under quiescent RF applied.

Ratings +10 -5 +5
-30 to +85 -40 to +100

Units V
dBm °C °C
2003 Fairchild Semiconductor Corporation

RMBA19500

Electrical Characteristics2

Parameter Frequency Range

Gain Small Signal Over

Gain Variation Over Frequency Range Over Temperature Range

Noise Figure Linear Output Power for CDMA3 OIP34

PAE 33dBm Pout Input VSWR Drain Voltage Vdd Gate Voltage VG1, 2 and VG3 5 Quiescent Currents IDQ1, 2 and IDQ3 5 Thermal Resistance Channel to Case RJC

Min 1930
43 24 2:1
180, 445 11

Max 1990

Units MHz dB
dB dBm %

V mA °C/W

Notes VDD = 7.0V, TC = 25°C. Part mounted on evaluation board with input and output matching to 9 Channel Forward Link QPSK Source 1.23Mbps modulation rate. CDMA ACPR1 is measured using the ratio of the average power within the 1.23MHz channel
at band center to the average power within a 30KHz bandwidth at an 885KHz offset. Minimum CDMA output power is met with ACPR1 > 36dBc. OIP3 specifications are achieved for power output levels of 27 and 30dBm per tone with tone spacing of 1.25MHz at band-center with adjusted supply and bias
conditions of Vdd = 6.5V and IdqTotal = 625mA see Note VG1,2 and VG3 must be individually adjusted to achieve IDQ1,2 and IDQ3. A single VGG bias supply adjusted to achieve IDQTOTAL = 625mA can be used with
nearly equivalent performance. Values for IDQ1,2 and IDQ3 shown have been optimized for CDMA operation. IDQ1, 2 and IDQ3 or IDQTOTAL can be adjusted to optimize the linearity of the amplifier for other modulation systems.

The device requires external input and output matching to as shown in Figure 3 and the Parts List.
2003 Fairchild Semiconductor Corporation

RMBA19500

Application Information

CAUTION THIS IS AN ESD SENSITIVE DEVICE

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived RMBA19500 Datasheet file may be downloaded here without warranties.

Datasheet ID: RMBA19500 634676