RFP4N100
RFP4N100 Datasheet
The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from an integrated circuit.
| Part | Datasheet |
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RFP4N100 |
RFP4N100 (pdf) |
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| Data Sheet 4.3A, 1000V, Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from an integrated circuit. Formerly developmental type TA09850. Ordering Information PACKAGE BRAND RFP4N100 RF1S4N100SM TO-220AB TO-263AB RFP4N100 F1S4N100 NOTE When ordering, use the entire part number. Packaging JEDEC TO-220AB DRAIN FLANGE SOURCE DRAIN GATE RFP4N100, RF1S4N100SM January 2002 • 4.3A, 1000V • rDS ON = • UIS Rating Curve Single Pulse • -55oC to 150oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” JEDEC TO-263AB GATE SOURCE DRAIN FLANGE 2002 Fairchild Semiconductor Corporation RFP4N100, RF1S4N100SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP4N100, RF1S4N100SM UNITS Drain to Source Breakdown Voltage Note 1 VDS 1000 Drain to Gate Voltage RGS = Note 1 VDGR 1000 Continuous Drain Current ID Pulsed Drain Current Note 3 IDM Gate to Source Voltage VGS ±20 Single Pulse Avalanche Rating EAS See UIS SOA Curve Figures 4, 14, 15 Maximum Power Dissipation PD Linear Derating Factor W/oC Operating and Storage Temperature TJ, TSTG -55 to 150 Maximum Temperature for Soldering Leads at 0.063in 1.6mm from case for 10s TL Package Body for 10s, see Techbrief 334 Tpkg CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS |
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