NDS9430

NDS9430 Datasheet

NDS9430

Part	Datasheet
NDS9430	NDS9430 (pdf)

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NDS9430 May 2002 NDS9430 30V P-Channel MOSFET This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings 4.5V 20V . • Power management • Load switch • Battery protection • A, V RDS ON = 60 VGS = V RDS ON =100 VGS = V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS ON • High power and current handling capability SO-8 Pin 1 SO-8 SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1c Note 1 Package Marking and Ordering Information Device Marking Device Reel Size NDS9430 NDS9430 13’’ Ratings ±20 1 to +175 50 125 25 Tape width 12mm Units °C/W Quantity 2500 units Fairchild Semiconductor Corporation NDS9430 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSSF IGSSR Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current Forward Transconductance VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = V, VGS = 20 V, VGS = V VGS = 0 V VDS = 0 V VDS = 0 V VDS = VGS, ID = µA ID = µA, Referenced to 25°C

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NDS9430

May 2002

NDS9430
30V P-Channel MOSFET

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings 4.5V 20V .
• Power management
• Load switch
• Battery protection
• A, V

RDS ON = 60 VGS = V RDS ON =100 VGS = V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low RDS ON
• High power and current handling capability

SO-8

Pin 1 SO-8 SS GG

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1c Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

NDS9430

NDS9430
13’’

Ratings
±20
1 to +175
50 125 25

Tape width 12mm

Units
°C/W

Quantity 2500 units

Fairchild Semiconductor Corporation

NDS9430

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

IDSS

IGSSF IGSSR

Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on

Drain Current

Forward Transconductance

VGS = 0 V, ID = µA

ID = µA, Referenced to 25°C

VDS = V, VGS = 20 V, VGS = V

VGS = 0 V VDS = 0 V VDS = 0 V

VDS = VGS, ID = µA ID = µA, Referenced to 25°C

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Datasheet ID: NDS9430 634623