RFP22N10

RFP22N10 Datasheet

RFP22N10, RF1S22N10SM

Part	Datasheet
RFP22N10	RFP22N10 (pdf)

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Data Sheet RFP22N10, RF1S22N10SM January 2002 File Number 22A, 100V, Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA9845. Ordering Information PACKAGE BRAND RFP22N10 TO-220AB RFP22N10 RF1S22N10SM TO-263AB F1S22N10 NOTE When ordering use the entire part number. Add the 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S22N10SM9A. • 22A, 100V • rDS ON = • UIS SOA Rating Curve Single Pulse • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC TO-220AB DRAIN FLANGE SOURCE DRAIN GATE JEDEC TO-263AB GATE SOURCE DRAIN FLANGE 2002 Fairchild Semiconductor Corporation RFP22N10, RF1S22N10SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 .VDGR Gate to Source Voltage VGS Continuous Drain Current .ID Pulsed Drain Current IDM Maximum Power Dissipation PD Linear Derating Factor Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief 334 .Tpkg RFP22N10, RF1S22N10SMS 100 ±20 22 50 100 -55 to 175 300 260 UNITS V A W W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. NOTE TJ = 25oC to 150oC. Electrical TC = 25oC, Unless Otherwise PARAMETER Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance Note 2 Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TEST CONDITIONS BVDSS ID = 250µA, VGS = 0 Figure 7 VGS TH VGS = VDS, ID = 250µA Figure 9 I DSS I GSS r DS ON t ON t d ON VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V, TC = 150oC VGS = ±20V, VDS = 0 ID = 22A, VGS = 10V Figure 8 VDD = 50V, ID = 11A, RL = VGS = 10V, RGS = Figure 11 t d OFF tf t OFF QG TOT VGS = 0V to 20V QG 10 VGS = 0V to 10V QG TH VGS = 0V to 2V TO-220 and TO-263 VDD = 80V, ID 22A, RL = Ig REF = 1mA Figure 11 Source to Drain Diode

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Data Sheet

RFP22N10, RF1S22N10SM

January 2002 File Number
22A, 100V, Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA9845.
Ordering Information

PACKAGE

BRAND

RFP22N10

TO-220AB

RFP22N10

RF1S22N10SM

TO-263AB

F1S22N10
NOTE When ordering use the entire part number. Add the 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S22N10SM9A.
• 22A, 100V
• rDS ON =
• UIS SOA Rating Curve Single Pulse
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Packaging

JEDEC TO-220AB

DRAIN FLANGE

SOURCE

DRAIN GATE

JEDEC TO-263AB

GATE SOURCE

DRAIN FLANGE
2002 Fairchild Semiconductor Corporation

RFP22N10, RF1S22N10SM

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 .VDGR Gate to Source Voltage VGS Continuous Drain Current .ID Pulsed Drain Current IDM Maximum Power Dissipation PD

Linear Derating Factor Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief 334 .Tpkg

RFP22N10, RF1S22N10SMS
100 ±20 22 50 100 -55 to 175
300 260

UNITS V A W

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied.

NOTE TJ = 25oC to 150oC.

Electrical TC = 25oC, Unless Otherwise

PARAMETER Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero-Gate Voltage Drain Current

Gate to Source Leakage Current Drain to Source On Resistance Note 2 Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient

TEST CONDITIONS

BVDSS ID = 250µA, VGS = 0 Figure 7 VGS TH VGS = VDS, ID = 250µA Figure 9

I DSS

I GSS r DS ON
t ON t d ON

VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V, TC = 150oC

VGS = ±20V, VDS = 0

ID = 22A, VGS = 10V Figure 8

VDD = 50V, ID = 11A, RL = VGS = 10V, RGS = Figure 11
t d OFF tf
t OFF QG TOT VGS = 0V to 20V QG 10 VGS = 0V to 10V QG TH VGS = 0V to 2V

TO-220 and TO-263

VDD = 80V, ID 22A, RL = Ig REF = 1mA Figure 11

Source to Drain Diode

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Datasheet ID: RFP22N10 634575