RFP15N05L

RFP15N05L Datasheet

RFP15N05L

Part	Datasheet
RFP15N05L	RFP15N05L (pdf)

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Data Sheet January 2004 RFP15N05L 15A, 50V, Ohm, Logic Level NChannel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA0522. Ordering Information PART NUMBER RFP15N05L PACKAGE TO-220AB BRAND RFP15N05L NOTE When ordering, use the entire part number. • 15A, 50V • rDS ON = • Design Optimized for 5V Gate Drives • Can be Driven from QMOS, NMOS, TTL Circuits • Compatible with Automotive Drive Requirements • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC TO-220AB DRAIN TAB SOURCE DRAIN GATE 2004 Fairchild Semiconductor Corporation RFP15N05L Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Parameter Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Continuous Drain Current ID Pulsed Drain Current Note 3 IDM Gate to Source Voltage VGS Maximum Power Dissipation PD Above TC = 25oC, Derate Linearly Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief 334 Tpkg Ratings 50 15 40 ±10 60 -55 to 150 300 260 Units V A V W W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current BVDSS VGS TH IDSS IGSS rDS ON CISS COSS CRSS td ON tr td OFF ID = 250µA, VGS = 0V VGS = VDS, ID = 250µA Figure 7 VDS = 48V, VDS = 50V VDS = 48V, VDS = 50V TC = 125oC VGS = ±10V, VDS = 0V ID = 15A, VGS = 5V Figures 5, 6 VDS = 25V, VGS = 0V, f = 1MHz Figure 8 VDD = 30V, ID = 7.5A, RG = Figures 10, 11 VGS = 5V

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Data Sheet

January 2004

RFP15N05L
15A, 50V, Ohm, Logic Level NChannel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type TA0522.
Ordering Information

PART NUMBER RFP15N05L

PACKAGE TO-220AB

BRAND RFP15N05L
NOTE When ordering, use the entire part number.
• 15A, 50V
• rDS ON =
• Design Optimized for 5V Gate Drives
• Can be Driven from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Packaging

JEDEC TO-220AB

DRAIN TAB

SOURCE DRAIN

GATE
2004 Fairchild Semiconductor Corporation

RFP15N05L

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Parameter

Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Continuous Drain Current ID

Pulsed Drain Current Note 3 IDM Gate to Source Voltage VGS Maximum Power Dissipation PD

Above TC = 25oC, Derate Linearly Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief 334 Tpkg

Ratings 50 15 40 ±10 60
-55 to 150
300 260

Units V A V W

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE TJ = 25oC to 125oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current

BVDSS VGS TH

IDSS

IGSS rDS ON

CISS COSS CRSS td ON
tr td OFF

ID = 250µA, VGS = 0V

VGS = VDS, ID = 250µA Figure 7

VDS = 48V, VDS = 50V VDS = 48V, VDS = 50V

TC = 125oC

VGS = ±10V, VDS = 0V

ID = 15A, VGS = 5V Figures 5, 6

VDS = 25V, VGS = 0V, f = 1MHz Figure 8

VDD = 30V, ID = 7.5A, RG = Figures 10, 11

VGS = 5V

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Datasheet ID: RFP15N05L 634574