RFP40N10

RFP40N10 Datasheet

RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM

Part	Datasheet
RFP40N10	RFP40N10 (pdf)

Related Parts	Information
RFG40N10	RFG40N10

PDF Datasheet Preview
Data Sheet RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM January 2002 40A, 100V, Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits. Formerly developmental type TA9846 Ordering Information PACKAGE BRAND RFG40N10 TO-247 RFG40N10 RFP40N10 TO-220AB RFP40N10 RF1S40N10 TO-262AA F1S40N10 RF1S40N10SM TO-263AB F1S40N10 NOTE When ordering, use the entire part number. Add the 9A, to obtain the TO-263AB variant in tape and reel, i.e. RF1S40N10SM9A. Packaging DRAIN FLANGE JEDEC STYLE TO-247 SOURCE DRAIN GATE • 40A, 100V • rDS ON = • UIS Rating Curve • SOA is Power Dissipation Limited • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” JEDEC TO-220AB DRAIN FLANGE SOURCE DRAIN GATE JEDEC TO-263AB GATE SOURCE DRAIN FLANGE JEDEC TO-262AA DRAIN FLANGE SOURCE DRAIN GATE 2002 Fairchild Semiconductor Corporation RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Drain to Source Breakdown Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Drain Current Continuous Figure .ID Pulsed Drain Current Note 2 IDM Pulsed Avalanche Rating EAS Power Dissipation PD Derate Above 25oC Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from case for 10s TL Package Body for 10s, see Techbrief 334 .Tpkg RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM 100 ±20 40 100 Figures 4, 12, 13 160 -55 to 175 300 260 UNITS V W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. NOTES TJ = 25oC to 150oC. Repetitive Rating pulse width limited by maximum junction temperature. Electrical TC = 25oC, Unless Otherwise PARAMETER TEST CONDITIONS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient BV DSS V GS TH I DSS I GSS r DS ON t ON t d ON tr t d OFF tf t OFF Q g TOT Q g 10 Q g TH R JA

PDF Datasheet Preview

Data Sheet

RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM

January 2002
40A, 100V, Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA9846
Ordering Information

PACKAGE

BRAND

RFG40N10

TO-247

RFG40N10

RFP40N10

TO-220AB

RFP40N10

RF1S40N10

TO-262AA

F1S40N10

RF1S40N10SM

TO-263AB

F1S40N10
NOTE When ordering, use the entire part number. Add the 9A, to obtain the TO-263AB variant in tape and reel, i.e. RF1S40N10SM9A.

Packaging

DRAIN FLANGE

JEDEC STYLE TO-247

SOURCE DRAIN GATE
• 40A, 100V
• rDS ON =
• UIS Rating Curve
• SOA is Power Dissipation Limited
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

JEDEC TO-220AB

DRAIN FLANGE

SOURCE

DRAIN GATE

JEDEC TO-263AB

GATE SOURCE

DRAIN FLANGE

JEDEC TO-262AA

DRAIN FLANGE

SOURCE DRAIN GATE
2002 Fairchild Semiconductor Corporation

RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

Drain to Source Breakdown Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Drain Current

Continuous Figure .ID Pulsed Drain Current Note 2 IDM Pulsed Avalanche Rating EAS Power Dissipation PD Derate Above 25oC Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from case for 10s TL Package Body for 10s, see Techbrief 334 .Tpkg

RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM
100 ±20
40 100 Figures 4, 12, 13 160 -55 to 175
300 260

UNITS V

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied.

NOTES TJ = 25oC to 150oC. Repetitive Rating pulse width limited by maximum junction temperature.

Electrical TC = 25oC, Unless Otherwise

PARAMETER

TEST CONDITIONS

Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current Drain to Source On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient

BV DSS V GS TH

I DSS

I GSS r DS ON
t ON t d ON
tr t d OFF
tf t OFF Q g TOT Q g 10 Q g TH R JA

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Datasheet ID: RFP40N10 634570