RFD3055SM9A

RFD3055SM9A Datasheet

RFD3055, RFD3055SM, RFP3055

Part	Datasheet
RFD3055SM9A	RFD3055SM9A (pdf)

Related Parts	Information
RFD3055SM	RFD3055SM
RFD3055	RFD3055
RFP3055	RFP3055

PDF Datasheet Preview
Data Sheet RFD3055, RFD3055SM, RFP3055 January 2002 12A, 60V, Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA49082. Ordering Information PACKAGE BRAND RFD3055 TO-251AA FD3055 RFD3055SM TO-252AA FD3055 RFP3055 TO-220AB FP3055 NOTE When ordering, use the entire part number. Add the 9A, to obtain the TO-252AA variant in tape and reel, i.e. RFD3055SM9A. Packaging JEDEC TO-251AA DRAIN FLANGE SOURCE DRAIN GATE • 12A, 60V • rDS ON = • Temperature Compensating Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” JEDEC TO-252AA GATE SOURCE DRAIN FLANGE JEDEC TO-220AB DRAIN FLANGE SOURCE DRAIN GATE 2002 Fairchild Semiconductor Corporation RFD3055, RFD3055SM, RFP3055 Absolute Maximum Ratings TC = 25oC, Unless Otherwise RFD3055, RFD3055SM, RFP3055 UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage .VGS Continuous Drain Current ID Pulsed Drain Current Note 3 IDM Single Pulse Avalanche Rating Figures 14, 15 IAS Power Dissipation .PD Linear Derating Factor Operating and Storage Temperature .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief 334 Tpkg 60 ±20 12 Refer to Peak Current Curve Refer to UIS Curve 53 -55 to 175 300 260 W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. NOTE TJ = 25oC to 150oC. Electrical TC = 25oC, Unless Otherwise PARAMETER TEST CONDITIONS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge BV DSS V GS TH I DSS I GSS r DS ON t ON t d ON tr t d OFF tf t OFF Q g TOT Q g 10 Q g TH ID = 250µA, VGS = 0V Figure 11 VGS = VDS, ID = 250µA Figure 10 VDS = Rated BVDSS, VGS = 0V TC = 125oC, VDS = x Rated BVDSS VGS = ±20V

PDF Datasheet Preview

Data Sheet

RFD3055, RFD3055SM, RFP3055

January 2002
12A, 60V, Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type TA49082.
Ordering Information

PACKAGE

BRAND

RFD3055

TO-251AA

FD3055

RFD3055SM

TO-252AA

FD3055

RFP3055

TO-220AB

FP3055
NOTE When ordering, use the entire part number. Add the 9A, to obtain the TO-252AA variant in tape and reel, i.e. RFD3055SM9A.

Packaging

JEDEC TO-251AA

DRAIN FLANGE

SOURCE DRAIN GATE
• 12A, 60V
• rDS ON =
• Temperature Compensating Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

JEDEC TO-252AA

GATE SOURCE

DRAIN FLANGE

JEDEC TO-220AB DRAIN FLANGE

SOURCE DRAIN GATE
2002 Fairchild Semiconductor Corporation

RFD3055, RFD3055SM, RFP3055

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

RFD3055, RFD3055SM, RFP3055

UNITS

Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage .VGS Continuous Drain Current ID Pulsed Drain Current Note 3 IDM Single Pulse Avalanche Rating Figures 14, 15 IAS Power Dissipation .PD

Linear Derating Factor

Operating and Storage Temperature .TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief 334 Tpkg
60 ±20 12 Refer to Peak Current Curve Refer to UIS Curve 53 -55 to 175
300 260

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied.

NOTE TJ = 25oC to 150oC.

Electrical TC = 25oC, Unless Otherwise

PARAMETER

TEST CONDITIONS

Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current Drain to Source On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge

BV DSS V GS TH

I DSS

I GSS r DS ON
t ON t d ON
tr t d OFF
tf t OFF Q g TOT Q g 10 Q g TH

ID = 250µA, VGS = 0V Figure 11

VGS = VDS, ID = 250µA Figure 10

VDS = Rated BVDSS, VGS = 0V TC = 125oC, VDS = x Rated BVDSS

VGS = ±20V

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Datasheet ID: RFD3055SM9A 634565