RFD15P05SM

RFD15P05SM Datasheet

RFD15P05, RFD15P05SM, RFP15P05

Part	Datasheet
RFD15P05SM	RFD15P05SM (pdf)

Related Parts	Information
RFD15P05	RFD15P05
RFP15P05	RFP15P05

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RFD15P05, RFD15P05SM, RFP15P05 Data Sheet January 2002 15A, 50V, Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09833. Ordering Information PACKAGE BRAND RFD15P05 TO-251AA D15P05 RFD15P05SM TO-252AA D15P05 RFP15P05 TO-220AB RFP15P05 NOTE When ordering, use the entire part number. Add the 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD15P05SM9A. Packaging JEDEC TO-251AA • 15A, 50V • rDS ON = • Temperature Compensating Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” JEDEC TO-252AA DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN FLANGE JEDEC TO-220AB DRAIN FLANGE SOURCE DRAIN GATE 2002 Fairchild Semiconductor Corporation RFD15P05, RFD15P05SM, RFP15P05 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Drain Source Voltage Note 1 VDSS Drain Gate Voltage RG = Note 1 VDGR Gate Source Voltage VGS Drain Current Continuous ID Pulsed Note 3 IDM Single Pulse Avalanche Rating EAS Power Dissipation PD Derate above 25oC. Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief 334 Tpkg RFD15P05, RFD15P05SM, RFP15P05 -50 -50 ±20 -15 Refer to Peak Current Curve Refer to UIS Curve 80 -55 to 175 300 260 UNITS V A W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. NOTE TJ = 25oC to 150oC. Electrical TC = 25oC, Unless Otherwise PARAMETER TEST CONDITIONS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current BV DSS V GS TH I DSS I GSS r DS ON t ON t D ON tR t D OFF tF t OFF Q G TOT Q G -10 Q G TH C ISS C OSS C RSS ID = 250µA, VGS = 0V Figure 11 VGS = VDS, ID = 250µA

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RFD15P05, RFD15P05SM, RFP15P05

Data Sheet

January 2002
15A, 50V, Ohm, P-Channel Power MOSFETs

These are P-Channel power MOSFETs manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA09833.
Ordering Information

PACKAGE

BRAND

RFD15P05

TO-251AA

D15P05

RFD15P05SM

TO-252AA

D15P05

RFP15P05

TO-220AB

RFP15P05
NOTE When ordering, use the entire part number. Add the 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD15P05SM9A.

Packaging

JEDEC TO-251AA
• 15A, 50V
• rDS ON =
• Temperature Compensating Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

JEDEC TO-252AA

DRAIN FLANGE

SOURCE

DRAIN GATE

GATE SOURCE

DRAIN FLANGE

JEDEC TO-220AB

DRAIN FLANGE

SOURCE

DRAIN GATE
2002 Fairchild Semiconductor Corporation

RFD15P05, RFD15P05SM, RFP15P05

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

Drain Source Voltage Note 1 VDSS Drain Gate Voltage RG = Note 1 VDGR Gate Source Voltage VGS Drain Current Continuous ID

Pulsed Note 3 IDM Single Pulse Avalanche Rating EAS Power Dissipation PD

Derate above 25oC. Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief 334 Tpkg

RFD15P05, RFD15P05SM, RFP15P05 -50 -50 ±20 -15

Refer to Peak Current Curve Refer to UIS Curve 80 -55 to 175
300 260

UNITS V A

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied.

NOTE TJ = 25oC to 150oC.

Electrical TC = 25oC, Unless Otherwise

PARAMETER

TEST CONDITIONS

Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current

BV DSS V GS TH

I DSS

I GSS r DS ON
t ON t D ON
tR t D OFF
tF t OFF Q G TOT Q G -10 Q G TH C ISS C OSS C RSS

ID = 250µA, VGS = 0V Figure 11

VGS = VDS, ID = 250µA

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived RFD15P05SM Datasheet file may be downloaded here without warranties.

Datasheet ID: RFD15P05SM 634563