RFD12N06RLE
RFD12N06RLE Datasheet
RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE
| Part | Datasheet |
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RFD12N06RLE |
RFD12N06RLE (pdf) |
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| Data Sheet RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE January 2002 17A, 60V, Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN FLANGE RFD12N06RLE RFD12N06RLESM JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE RFP12N06RLE • Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves Ordering Information PACKAGE BRAND RFD12N06RLE TO-251AA 12N6LE RFD12N06RLESM TO-252AA 12N6LE RFP12N06RLE TO-220AB 12N06RLE NOTE When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, i.e. RFD12N06RLESM9A. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Drain Current Continuous TC= TC= 25oC, 25oC, 5V 10V Figure Continuous TC= 135oC, VGS = 5V ID Continuous TC= 135oC, VGS = 4.5V Figure 2 ID Pulsed Drain Current IDM Pulsed Avalanche Rating UIS ±16 Figure 4 Figures 6, 17, 18 Power Dissipation Derate Above 25oC Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief TB334. Tpkg NOTE: 49 -55 to 175 300 260 W/oC TJ = 25oC to 150oC. CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 2002 Fairchild Semiconductor Corporation RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BVDSS IDSS IGSS ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V , TC = -40oC Figure 12 |
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