RFD10P03LSM

RFD10P03LSM Datasheet

RFD10P03L, RFD10P03LSM, RFP10P03L

Part	Datasheet
RFD10P03LSM	RFD10P03LSM (pdf)

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RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet January 2002 10A, 30V, Ohm, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49205. Ordering Information PACKAGE BRAND RFD10P03L TO-251AA 10P03L RFD10P03LSM TO-252AA 10P03L RFP10P03L TO-220AB F10P03L NOTE When ordering, use the entire part number. Add the 9A, to obtain the TO-252AA variant in tape and reel, i.e. RFD10P03LSM9A.. Packaging JEDEC TO-251AA DRAIN FLANGE SOURCE DRAIN GATE • 10A, 30V • rDS ON = • Temperature Compensating Model • PSPICE Thermal Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature JEDEC TO-252AA DRAIN FLANGE GATE SOURCE JEDEC TO-220AB DRAIN FLANGE SOURCE DRAIN GATE 2002 Fairchild Semiconductor Corporation RFD10P03L, RFD10P03LSM, RFP10P03L Absolute Maximum Ratings TC = 25oC Unless Otherwise Drain to Source Voltage VDSS Drain to Gate Voltage RGS = VDGR Gate to Source Voltage VGS Drain Current RMS Continuous ID Pulsed Drain Current .IDM Single Pulse Avalanche Rating EAS Power Dissipation Derate Above 25oC Operating and Storage Temperature TJ, TSTG Maximum Lead Temperature for Soldering .TL 0.063in 1.6mm from case for 10s RFD10P03L, RFD10P03LSM, RFP10P03L -30 -30 ±10 10 See Figure 5 Refer to UIS Curve 65 -55 to 175 300 UNITS V W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. NOTE TJ = 25oC to 150oC Electrical TC = 25oC, Unless Otherwise PARAMETER TEST CONDITIONS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance Note 1 Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at -5V Threshold Gate Charge BV DSS VGS TH IDSS IGSS rDS ON tON td ON tr td OFF tf tOFF Qg TOT Qg -5 Qg TH

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RFD10P03L, RFD10P03LSM, RFP10P03L

Data Sheet

January 2002
10A, 30V, Ohm, Logic Level, P-Channel Power MOSFET

These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA49205.
Ordering Information

PACKAGE

BRAND

RFD10P03L

TO-251AA
10P03L

RFD10P03LSM

TO-252AA
10P03L

RFP10P03L

TO-220AB

F10P03L
NOTE When ordering, use the entire part number. Add the 9A, to obtain the TO-252AA variant in tape and reel, i.e. RFD10P03LSM9A..

Packaging

JEDEC TO-251AA

DRAIN FLANGE

SOURCE DRAIN

GATE
• 10A, 30V
• rDS ON =
• Temperature Compensating Model
• PSPICE Thermal Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature

JEDEC TO-252AA

DRAIN FLANGE GATE

SOURCE

JEDEC TO-220AB DRAIN FLANGE

SOURCE DRAIN GATE
2002 Fairchild Semiconductor Corporation

RFD10P03L, RFD10P03LSM, RFP10P03L

Absolute Maximum Ratings TC = 25oC Unless Otherwise

Drain to Source Voltage VDSS Drain to Gate Voltage RGS = VDGR Gate to Source Voltage VGS Drain Current

RMS Continuous ID

Pulsed Drain Current .IDM

Single Pulse Avalanche Rating EAS

Power Dissipation Derate Above 25oC

Operating and Storage Temperature TJ, TSTG

Maximum Lead Temperature for Soldering .TL 0.063in 1.6mm from case for 10s

RFD10P03L, RFD10P03LSM, RFP10P03L -30 -30 ±10
10 See Figure 5 Refer to UIS Curve
65 -55 to 175 300

UNITS V

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied.

NOTE TJ = 25oC to 150oC

Electrical TC = 25oC, Unless Otherwise

PARAMETER

TEST CONDITIONS

Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current Drain to Source On Resistance Note 1

Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at -5V Threshold Gate Charge

BV DSS VGS TH

IDSS

IGSS rDS ON
tON td ON
tr td OFF
tf tOFF Qg TOT Qg -5 Qg TH

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived RFD10P03LSM Datasheet file may be downloaded here without warranties.

Datasheet ID: RFD10P03LSM 634560