QSE214
QSE214 Datasheet
QSE213
| Part | Datasheet |
|---|---|
QSE214 |
QSE214 (pdf) |
| Related Parts | Information |
|---|---|
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QSE213 |
QSE213 |
| PDF Datasheet Preview |
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| PLASTIC SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS EMITTER SQ. 2X QSE213 QSE214 SCHEMATIC Collector NOTES Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions unless otherwise Emitter The QSE213/QSE214 is a silicon phototransistor encapsulated in a medium angle, infrared transparent, black thin plastic sidelooker package. • NPN Silicon Phototransistor • Package Type Sidelooker • Medium Reception Angle, 50° • Daylight Filter • Black Epoxy Package • Matching Emitter QEE213 2002 Fairchild Semiconductor Corporation 7/23/02 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE213 QSE214 ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise Parameter Rating Unit Operating Temperature Storage Temperature Soldering Temperature Iron 2,3,4 Soldering Temperature Flow 2,3 Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation 1 TOPR -40 to +100 TSTG -40 to +100 TSOL-I 240 for 5 sec TSOL-F 260 for 10 sec ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C unless otherwise Parameter Peak Sensitivity Reception Angle Collector Emitter Dark Current Collector Emitter Breakdown Emitter Collector Breakdown On-State Collector Current Saturation Voltage Rise Time Fall Time Test Conditions Symbol Min Typ λPS ±25 VCE = 10 V, Ee = 0 IC = 1 mA |
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