QRE00034
QRE00034 Datasheet
QRE00034
| Part | Datasheet |
|---|---|
QRE00034 |
QRE00034 (pdf) |
| PDF Datasheet Preview |
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| REFLECTIVE OBJECT SENSOR PACKAGE DIMENSIONS SQ. 4X QRE00034 SCHEMATIC Dimensions for all drawings are in inches. Tolerance of ± on all non-nominal dimensions unless otherwise specified. The QRE00034 reflective object sensor consists of an infrared emitting diode and an NPN phototransistor mounted side by side on a converging optical axis in a black housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes in its field of view. • Phototransistor output • No contact surface sensing • Daylight filter on the sensor • Emitter = 940 nm 2001 Fairchild Semiconductor Corporation DS300254 9/21/01 1 OF 6 REFLECTIVE OBJECT SENSOR QRE00034 ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified Symbol TOPR TSTG TSOL-I TSOL-F VR IFP PD VCEO Rating -40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec 5 1 100 Units °C °C °C °C V A mW ELECTRICAL / OPTICAL CHARACTERISTICS TA = 25°C PARAMETER TEST CONDITIONS UNITS EMITTER Forward Voltage IF = 20 mA VR = 5 V Peak Emission Wavelength SENSOR Dark Current IF = 20 mA VCE = 10 V, IF = 0 mA Peak Sensitivity Wavelength VCE = 5 V COUPLED Collector Current IF = 20 mA, VCE = 10 V 6,7 IC ON Collector Emitter IF = 20 mA, IC = mA VCE SAT Saturation Voltage Rise Time VCE = 5 V, RL = 100 |
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