QRC1133

QRC1133 Datasheet

QRC1133

Part	Datasheet
QRC1133	QRC1133 (pdf)

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PHOTOTRANSISTOR REFLECTIVE OBJECT SENSORS QRC1133 PACKAGE DIMENSIONS MIN #26 AWG E C 4X FUNCTION C COLLECTOR E EMITTER K CATHODE A ANODE WIRE COLOR WHITE BLUE GREEN ORANGE REFLECTIVE SURFACE SCHEMATIC Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions unless otherwise specified. The QRC1133 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes within its field of view. The area of the optimum response approximates a circle in diameter. • Phototransistor output • High Sensitivity • Low cost plastic housing • #26 AWG, 24 inch PVC wire termination 2001 Fairchild Semiconductor Corporation DS300353 11/06/01 1 OF 4 PHOTOTRANSISTOR REFLECTIVE OBJECT SENSORS ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD VCEO VECO IC PD Rating -40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec 50 5 100 30 5 20 100 NOTES Derate power dissipation linearly mW/°C above 25°C. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron 1/16” 1.6mm minimum from housing. D is the distance from the assembly face to the reflective surface. Cross talk is the photo current measured with current to the input diode and no reflecting surface. Measured using an Eastman Kodak neutral test card with 90% diffused reflecting surface. ELECTRICAL / OPTICAL CHARACTERISTICS TA = 25°C PARAMETER TEST CONDITIONS EMITTER Forward Voltage IF = 40 mA VR = V IF = 20 mA IC = 1 mA BVCEO Emitter-Collector Breakdown Voltage IE = mA BVECO Collector-Emitter Dark Current VCE = 10 V, IF = 0 mA ICEO

PDF Datasheet Preview

PHOTOTRANSISTOR REFLECTIVE OBJECT SENSORS

QRC1133

PACKAGE DIMENSIONS

MIN #26 AWG

E C 4X

FUNCTION

C COLLECTOR E EMITTER K CATHODE A ANODE

WIRE COLOR

WHITE BLUE GREEN ORANGE

REFLECTIVE SURFACE

SCHEMATIC

Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions
unless otherwise specified.

The QRC1133 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes within its field of view. The area of the optimum response approximates a circle in diameter.
• Phototransistor output
• High Sensitivity
• Low cost plastic housing
• #26 AWG, 24 inch PVC wire termination
2001 Fairchild Semiconductor Corporation DS300353 11/06/01
1 OF 4

PHOTOTRANSISTOR REFLECTIVE OBJECT SENSORS

ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified

Symbol TOPR TSTG TSOL-I TSOL-F

IF VR PD

VCEO VECO

IC PD

Rating -40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec
50 5 100
30 5 20 100

NOTES Derate power dissipation linearly mW/°C above 25°C. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron 1/16” 1.6mm minimum from housing. D is the distance from the assembly face to the reflective surface. Cross talk is the photo current measured with current to the input diode and no reflecting surface. Measured using an Eastman Kodak neutral test card with 90% diffused reflecting surface.

ELECTRICAL / OPTICAL CHARACTERISTICS TA = 25°C

PARAMETER

TEST CONDITIONS

EMITTER Forward Voltage

IF = 40 mA

VR = V IF = 20 mA

IC = 1 mA

BVCEO

Emitter-Collector Breakdown Voltage

IE = mA

BVECO

Collector-Emitter Dark Current

VCE = 10 V, IF = 0 mA

ICEO

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Datasheet ID: QRC1133 634525