PN200_D74Z

PN200_D74Z Datasheet

PN200 / MMBT200 / PN200A / MMBT200A

Part	Datasheet
PN200_D74Z	PN200_D74Z (pdf)

Related Parts	Information
PN200RM	PN200RM
PN200	PN200
PN200A_D75Z	PN200A_D75Z
PN200A_J18Z	PN200A_J18Z
PN200A_D74Z	PN200A_D74Z
PN200_D75Z	PN200_D75Z
PN200A_D26Z	PN200A_D26Z
PN200_D26Z	PN200_D26Z
PN200_D27Z	PN200_D27Z
MMBT200A	MMBT200A

PDF Datasheet Preview
PN200 / MMBT200 / PN200A / MMBT200A PN200 PN200A MMBT200 MMBT200A TO-92 SOT-23 Mark N2 / N2A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range 45 60 500 -55 to +150 These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3 All voltages V and currents A are negative polarity for PNP transistors. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Device mounted on FR-4 PCB X PN200 PN200A MMBT200 MMBT200A Units V mA °C Units mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation PN200 / MMBT200 / PN200A / MMBT200A PNP General Purpose Amplifier continued Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS BVCBO Collector-Base Breakdown Voltage BVCEO

PDF Datasheet Preview

PN200 / MMBT200 / PN200A / MMBT200A

PN200 PN200A

MMBT200 MMBT200A

TO-92

SOT-23

Mark N2 / N2A

PNP General Purpose Amplifier

This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Parameter

Value

VCEO VCBO VEBO IC TJ, Tstg

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range
45 60 500 -55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3 All voltages V and currents A are negative polarity for PNP transistors.

Thermal Characteristics TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB X

PN200 PN200A
*MMBT200 *MMBT200A

Units

V mA °C

Units
mW/°C °C/W °C/W
1997 Fairchild Semiconductor Corporation

PN200 / MMBT200 / PN200A / MMBT200A

PNP General Purpose Amplifier
continued

Electrical Characteristics TA = 25°C unless otherwise noted

Parameter

Test Conditions

Min Max Units

OFF CHARACTERISTICS

BVCBO

Collector-Base Breakdown Voltage

BVCEO

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Datasheet ID: PN200_D74Z 634483