MPSW56

MPSW56 Datasheet

MPSW56

Part	Datasheet
MPSW56	MPSW56 (pdf)

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MPSW56 MPSW56 TO-226 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA. Sourced from Process Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range 80 -55 to +150 These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic MPSW56 Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Device mounted on FR-4 PCB 36 mm X 18 mm X mm mounting pad for the collector lead min. 6 cm2. Units V A °C Units W mW/°C °C/W °C/W 2000 Fairchild Semiconductor Corporation MPSW56 Electrical Characteristics Parameter PNP General Purpose Amplifier continued TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V BR CEO V BR CBO V BR EBO ICBO ICEO IEBO C ollector-E m itter B reakdow n V oltage C ollector-B ase B reakdow n V oltage E m itter-B ase B reakdow n V oltage C ollector-C utoff C urrent C ollector-C utoff C urrent E m itter-C utoff C urrent

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MPSW56

MPSW56

TO-226

PNP General Purpose Amplifier

This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA. Sourced from Process

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Parameter

Value

VCEO

Collector-Emitter Voltage

VCBO VEBO IC TJ, Tstg

Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range
80 -55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Characteristic

MPSW56

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 36 mm X 18 mm X mm mounting pad for the collector lead min. 6 cm2.

Units

V A °C

Units

W mW/°C °C/W °C/W
2000 Fairchild Semiconductor Corporation

MPSW56

Electrical Characteristics

Parameter

PNP General Purpose Amplifier
continued

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V BR CEO

V BR CBO V BR EBO ICBO ICEO IEBO

C ollector-E m itter B reakdow n V oltage C ollector-B ase B reakdow n V oltage E m itter-B ase B reakdow n V oltage C ollector-C utoff C urrent C ollector-C utoff C urrent

E m itter-C utoff C urrent

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Datasheet ID: MPSW56 634460