MPSW3725
MPSW3725 Datasheet
MPSW3725
| Part | Datasheet |
|---|---|
MPSW3725 |
MPSW3725 (pdf) |
| PDF Datasheet Preview |
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| MPSW3725 MPSW3725 TO-226 NPN Transistor This device is designed for high current, low impedance line driver applications. Sourced from Process Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 40 60 -55 to +150 NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSW3725 125 Units V A °C Units W mW/°C °C/W °C/W 1999 Fairchild Semiconductor Corporation MPSW3725 Electrical Characteristics Parameter TA= 25°C unless otherwise noted Test Conditions NPN Transistor continued Min Typ Max Units OFF CHARACTERISTICS |
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