MPSW01
MPSW01 Datasheet
MPSW01 NPN General Purpose Amplifier
| Part | Datasheet |
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MPSW01 |
MPSW01 (pdf) |
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| MPSW01 NPN General Purpose Amplifier MPSW01 NPN General Purpose Amplifier • This device is designed for general purpose medium power amplifiers • Sourced from process 37 Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation Derate about 25°C TJ , TSTG Operating Junction and Storage Temperature Range -55 to +150 * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Note 1 These ratings are based on a maximum junction temperature 150 ‘C 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Parameter Thermal Resistance, Junction to Case* Thermal Resistance, Junction to Ambien* * Device mounted on FR-4 PCB 36 mm X 18 mm X mm mounting pad for the collector lead min. 6cm2 Value 50 125 Units V A W mW/°C °C Units °C/W °C/W 2006 Fairchild Semiconductor Corporation MPSW01 NPN General Purpose Amplifier Electrical Characteristics Note Ta = 25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 V BR CBO Collector-Base Breakdown Voltage IC = 100 uA, IE = 0 |
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