MPSH34
Part | Datasheet |
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MPSH34_D75Z (pdf) |
Related Parts | Information |
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MPSH34_D26Z |
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MPSH34 |
PDF Datasheet Preview |
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MPSH34 MPSH34 NPN General Purpose Amplifier • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. • Sourced from process • See MPSH11 for characteristics. Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature - Continuous TO-92 Base Emitter Collector Value 40 50 -55 ~ +150 Units V mA °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR CEO Collector-Emitter Sustaining Voltage * V BR CBO Collector-Base Breakdown Voltage V BR EBO Emitter-Base Breakdown Voltage ICBO Collector Cutoff Current On Characteristics IC = 1.0mA, IB = 0 IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCB = 30V, IE = 0 DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE on Base-Emitter On Voltage Small Signal Characteristics VCE = 2.0V, IC = 20mA VCE = 15V, IC = 7.0mA IC = 7.0mA, IB = 2.0mA VCE = 15V, IC = 7.0mA Current Gain Bandwidth Product IC =15mA, VCE = 15V, f = 100MHz |
More datasheets: U2W-MIPS | U2W-COP | MAX9665ETP+ | SDK-ZB2430-D-S-A | SDK-ZB2430-Q-X-U | SDK-ZB2430-Q-X-A | SDK-ZB2430-Q-S-U | SDK-ZB2430-D-S-U | SDK-ZB2430-Q-S-A | MPSH34_D26Z |
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