MPSA13_D27Z
MPSA13_D27Z Datasheet
MPSA13 NPN Darlington Transistor
| Part | Datasheet |
|---|---|
MPSA13_D27Z |
MPSA13_D27Z (pdf) |
| Related Parts | Information |
|---|---|
|
MPSA13RA |
MPSA13RA |
|
MPSA13_D74Z |
MPSA13_D74Z |
|
MPSA13_D26Z |
MPSA13_D26Z |
|
MPSA13_D75Z |
MPSA13_D75Z |
|
MPSA13 |
MPSA13 |
| PDF Datasheet Preview |
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| MPSA13 NPN Darlington Transistor MPSA13 NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process July 2007 TO-92 Emitter Base Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Parameter VCES VCBO VEBO IC TJ, TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 30 10 -55 to +150 Units V A °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR CES Collector-Emitter Breakdown Voltage ICBO Collector-Cutoff Current IEBO Emitter-Cutoff Current On Characteristics * IC = 100uA, IB = 0 VCB = 30V, IE = 0 VEB = 10V, IC = 0 hFE VCE sat DC Current Gain Collector-Emitter Saturation Voltage VCE = 5.0V, IC =10mA VCE = IC = 100mA IC = 100mA, IB = 0.1mA Min. Max. Units 5,000 10,000 VBE on Base-Emitter On Voltage Small Signal Characteristics Current Gain Bandwidth Product * Pulse Test Pulse Duty IC = 100mA,VCE = 5.0V IC = 10mA, VCE = 10V, f = 100MHz 2007 Fairchild Semiconductor Corporation MPSA13 NPN Darlington Transistor |
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