MPS651
MPS651 Datasheet
MPS651
| Part | Datasheet |
|---|---|
MPS651 |
MPS651 (pdf) |
| Related Parts | Information |
|---|---|
|
MPS651_D26Z |
MPS651_D26Z |
| PDF Datasheet Preview |
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| MPS651 MPS651 Switching and Amplifier Applications NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 hFE4 VCE sat Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage VBE sat VBE on fT Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Band Width Product IC=100µA, IE=0 IC=10mA, IB=0 IC=10µA, IC=0 VCB=80V, IE=0 VEB=4.0V, IC=0 VCE=2V, IC=50mA VCE=2V, IC=500mA VCE=2V, IC=1.0A VCE=2V, IC=2.0A IC=1.0A, IB=100mA IC=2.0A, IB=200mA IC=1.0A, IB=100mA VCE=2.0V, IC=1.0A VCE=5.0V, IC=50mA, f=100MHz TO-92 Emitter Base Collector Ratings 80 60 5 625 150 -55 ~ 150 Units V A mW °C °C Min. 80 60 5 75 40 Typ. Max. |
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