MPF102_D27Z
MPF102_D27Z Datasheet
MPF102
| Part | Datasheet |
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MPF102_D27Z |
MPF102_D27Z (pdf) |
| Related Parts | Information |
|---|---|
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MPF102 |
MPF102 |
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MPF102_D74Z |
MPF102_D74Z |
| PDF Datasheet Preview |
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| MPF102 TO-92 N-Channel RF Amplifier This device is designed for electronic switching Applications such as low ON resistance analog switching. Sourced from Process Absolute Maximum Ratings * TA=25 degree C unless otherwise noted Parameter Value Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TJ,Tstg Operating and Storage Junction Temperature Range -55 to + 155 Units V mA degree C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25 degrees C unless otherwise noted. Characteristic Units Total Device Dissipation Derate above 25 degrees C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient * Device mounted on FR-4 PCB X mW/degrees C degrees C/W degrees C/W 1999 Fairchild Semiconductor Corporation N-Channel RF Amplifier Continued Electrical Characteristics TA= 25 degrees C unless otherwise noted Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS V BR GSS Gate-Source Breakdown Voltage IG=-1.0µA, VDS=0 IGSS VGS=-15V,VDS=0 |
| More datasheets: A15641-12 | A15673-15 | HR1001GS | HR1001GS-Z | 76650-0056 | ES5226M050AE1EA | MIKROE-2779 | MAX9552EVKIT+ | MIKROE-2729 | MPF102 |
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