MOC70P1

MOC70P1 Datasheet

MOC70P1 / MOC70P2 / MOC70P3

Part	Datasheet
MOC70P1	MOC70P1 (pdf)

Related Parts	Information
MOC70P3_F132	MOC70P3_F132
MOC70P3	MOC70P3
MOC70P2	MOC70P2

PDF Datasheet Preview
MOC70P1 / MOC70P2 / MOC70P3 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH PACKAGE DIMENSIONS PIN 2 CATHODE SEATING PLANE PIN 3 COLLECTOR PIN 1 ANODE PIN 4 EMITTER NOTES Dimensions for all drawings are in inches millimeters . Tolerance of ± on all non-nominal dimensions unless otherwise specified. The MOC70PX consists of an infrared light emitting diode coupled to an NPN silicon phototransistor packaged into an injection molded housing. The housing is designed for wide gap, non contact sensing. • No contact sensing • 5 mm gap • aperture • Low profile • PCB mount • Transistor output SCHEMATIC NOTES Derate power dissipation linearly, on each component, mW/°C above 25°C. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron tip 1/16” 1.6mm from housing. As long as leads are not under any stress or spring tension. ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD VCEO VECO IC PD Rating -55 to +100 -55 to +100 240 for 5 sec 260 for 10 sec 50 6 100 30 20 150 Units °C °C °C °C mA V mW V mA mW 2001 Fairchild Semiconductor Corporation DS300009 4/25/01 1 OF 5 MOC70P1 / MOC70P2 / MOC70P3 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH ELECTRICAL / OPTICAL CHARACTERISTICS TA = 25°C PARAMETER TEST CONDITIONS UNITS EMITTER IF = 50 mA VR = 6 V Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Collector Breakdown Voltage IE = 100 µA Collector-Emitter Leakage

PDF Datasheet Preview

MOC70P1 / MOC70P2 / MOC70P3

PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH

PACKAGE DIMENSIONS

PIN 2 CATHODE

SEATING PLANE

PIN 3 COLLECTOR

PIN 1 ANODE

PIN 4 EMITTER

NOTES Dimensions for all drawings are in inches millimeters . Tolerance of ± on all non-nominal dimensions
unless otherwise specified.

The MOC70PX consists of an infrared light emitting diode coupled to an NPN silicon phototransistor packaged into an injection molded housing. The housing is designed for wide gap, non contact sensing.
• No contact sensing
• 5 mm gap
• aperture
• Low profile
• PCB mount
• Transistor output

SCHEMATIC

NOTES

Derate power dissipation linearly, on each component, mW/°C above 25°C.

RMA flux is recommended. Methanol or isopropyl alcohols are recommended as
cleaning agents. Soldering iron tip 1/16” 1.6mm from housing. As long as leads are not under any stress or spring tension.

ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified

Symbol TOPR TSTG TSOL-I TSOL-F

IF VR PD

VCEO VECO

IC PD

Rating -55 to +100 -55 to +100 240 for 5 sec 260 for 10 sec
50 6 100
30 20 150

Units °C °C °C °C
mA V mW

V mA mW
2001 Fairchild Semiconductor Corporation DS300009 4/25/01
1 OF 5

MOC70P1 / MOC70P2 / MOC70P3

PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH

ELECTRICAL / OPTICAL CHARACTERISTICS TA = 25°C

PARAMETER

TEST CONDITIONS

UNITS

EMITTER

IF = 50 mA VR = 6 V

Collector-Emitter Breakdown Voltage IC = 10 mA

Emitter-Collector Breakdown Voltage IE = 100 µA

Collector-Emitter Leakage

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MOC70P1 Datasheet file may be downloaded here without warranties.

Datasheet ID: MOC70P1 634421