MMBTH34

MMBTH34 Datasheet

MMBTH34

Part	Datasheet
MMBTH34	MMBTH34 (pdf)

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MMBTH34 MMBTH34 NPN General Purpose Amplifier • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. • Sourced from process • See MPSH11 for characteristics. Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature - Continuous Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR CEO Collector-Emitter Sustaining Voltage * V BR CBO Collector-Base Breakdown Voltage V BR EBO Emitter-Base Breakdown Voltage ICBO Collector Cutoff Current On Characteristics IC = 1.0mA, IB = 0 IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCB = 30V, IE = 0 DC Current Gain Small Signal Characteristics IC = 20mA, VCE = 2V Current Gain Bandwidth Product * Pulse Test Pulse Width 300µs, Duty Cycle IC = 15mA, VCE = 10V, f = 100MHz Thermal Characteristics TA=25°C unless otherwise noted Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient * Device mounted on FR-4 PCB x 2 SOT-23 1 Mark 3K Base Emitter Collector Value 40 50 -55 ~ +150 Units V mA °C

PDF Datasheet Preview

MMBTH34

MMBTH34

NPN General Purpose Amplifier
• This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers.
• Sourced from process
• See MPSH11 for characteristics.

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCEO VCBO VEBO IC TJ, Tstg

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature
- Continuous

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

V BR CEO

Collector-Emitter Sustaining Voltage *

V BR CBO

Collector-Base Breakdown Voltage

V BR EBO

Emitter-Base Breakdown Voltage

ICBO

Collector Cutoff Current

On Characteristics

IC = 1.0mA, IB = 0 IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCB = 30V, IE = 0

DC Current Gain

Small Signal Characteristics

IC = 20mA, VCE = 2V

Current Gain Bandwidth Product
* Pulse Test Pulse Width 300µs, Duty Cycle

IC = 15mA, VCE = 10V, f = 100MHz

Thermal Characteristics TA=25°C unless otherwise noted

Parameter

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB x
2 SOT-23 1 Mark 3K Base Emitter Collector

Value 40 50
-55 ~ +150

Units V mA °C

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Datasheet ID: MMBTH34 634410