MMBT2907AK
MMBT2907AK Datasheet
MMBT2907AK PNP Epitaxial Silicon Transistor
| Part | Datasheet |
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MMBT2907AK |
MMBT2907AK (pdf) |
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| MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking SOT-23 1 Base Emitter Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction and Storage Temperature Range Value -60 -60 -5 -600 350 -55 ~ 150 Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO hFE Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain VCE sat Collector-Emitter Saturation Voltage * VBE sat Base-Emitter Saturation Voltage * Current Gain Bandwidth Product Output Capacitance Turn On Time tOFF Turn Off Time * Pulse Test Pulse Duty IC = -10µA, IE = 0 IC = -10mA, IB = 0 IE = -10µA, IC = 0 VCB = -50V, IE = 0 VCE = -10V, IC = -0.1mA VCE = -10V, IC = -1.0mA VCE = -10V, IC = -10mA VCE = -10V, IC = -150mA * VCE = -10V, IC = -500mA * IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -50mA, VCE = -20V, f = 100MHz VCB = -10V, IE = 0, f = 1.0MHz VCC = -30V, IC = -150mA IB1 = -15mA VCC = -6V, IC = -150mA IB1 = IB2 = -15mA Min. -60 -60 -5 75 100 50 Units V mA mW °C |
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