LED56

LED56 Datasheet

LED55B

Part	Datasheet
LED56	LED56 (pdf)

Related Parts	Information
LED55CB	LED55CB
LED55CFB	LED55CFB
LED56F	LED56F
LED55CF	LED55CF
LED55C	LED55C
LED55B	LED55B
LED55BF	LED55BF

PDF Datasheet Preview
GaAs INFRARED EMITTING DIODE LED55B PACKAGE DIMENSIONS LED55C LED56 ANODE CASE 45° Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions unless otherwise specified. SCHEMATIC ANODE Connected To Case CATHODE The LED55B/LED55C/LED56 are 940 nm LEDs in a narrow angle, TO-46 package. • Good optical to mechanical alignment • Mechanically and wavelength matched to the TO-18 series phototransistor • Hermetically sealed package • High irradiance level 2001 Fairchild Semiconductor Corporation DS300312 6/05/01 1 OF 4 GaAs INFRARED EMITTING DIODE LED55B LED55C LED56 ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified TOPR TSTG TSOL-I TSOL-F IF VR PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 100 10 3 170 Unit °C °C °C °C mA A V mW W NOTE Derate power dissipation linearly mW/°C above 25°C ambient. Derate power dissipation linearly mW/°C above 25°C case. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron tip 1/16” 1.6mm minimum from housing. As long as leads are not under any stress or spring tension Total power output, PO, is the total power radiated by the device into a solid angle of 2 # steradians. ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C All measurements made under pulse conditions TEST CONDITIONS SYMBOL UNITS IF = 100 mA IF = 100 mA nm Deg. IF = 100 mA VR = 3 V IF = 100 mA IF = 100 mA IF = 100 mA 2 OF 4 6/05/01 DS300312 GaAs INFRARED EMITTING DIODE

PDF Datasheet Preview

GaAs INFRARED EMITTING DIODE

LED55B

PACKAGE DIMENSIONS

LED55C

LED56

ANODE CASE
45°

Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions
unless otherwise specified.

SCHEMATIC

ANODE

Connected

To Case

CATHODE

The LED55B/LED55C/LED56 are 940 nm LEDs in a narrow angle, TO-46 package.
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
2001 Fairchild Semiconductor Corporation DS300312 6/05/01
1 OF 4

GaAs INFRARED EMITTING DIODE

LED55B LED55C LED56

ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified

TOPR TSTG TSOL-I TSOL-F

IF VR PD

Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec
100 10 3 170

Unit °C °C °C °C mA A V mW W

NOTE Derate power dissipation linearly mW/°C above 25°C ambient. Derate power dissipation linearly mW/°C above 25°C case. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron tip 1/16” 1.6mm minimum from housing. As long as leads are not under any stress or spring tension Total power output, PO, is the total power radiated by the device into a solid angle of 2 # steradians.

ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C All measurements made under pulse conditions

TEST CONDITIONS SYMBOL

UNITS

IF = 100 mA

IF = 100 mA
nm Deg.

IF = 100 mA

VR = 3 V

IF = 100 mA

IF = 100 mA

IF = 100 mA
2 OF 4
6/05/01 DS300312

GaAs INFRARED EMITTING DIODE

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Datasheet ID: LED56 634287