KST63/64
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KST64MTF (pdf) |
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KST63MTF |
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KST63/64 KST63/64 Darlington Transistor PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCES VEBO IC PC TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature SOT-23 1 Base Emitter Collector Value -30 -30 -10 -500 350 150 Units V mA mW °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCES ICBO IEBO hFE Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain KST63 KST64 KST63 K ST64 IC= -100, VBE=0 VCE= -30V, IE=0 VEB= -10V, IC=0 VCE= -5V, IC= -10mA VCE= -5V, IC= -100mA VCE sat VBE on fT Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product * Pulse test Duty IC= -100mA, IB= -0.1mA VCE= -5V, IC= -100mA VCE= -5V, IC= -10mA f=100MHz Min. Max. Units -100 -100 5K 10K 20K Marking Code Type Mark KST63 2U KST64 2V Marking 2002 Fairchild Semiconductor Corporation KST63/64 |
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