KST5179MTF
KST5179MTF Datasheet
KST5179
| Part | Datasheet |
|---|---|
KST5179MTF |
KST5179MTF (pdf) |
| PDF Datasheet Preview |
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| KST5179 KST5179 RF Amplifier Transistor NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Ta=25°C Derate above 25°C TJ TSTG Junction Temperature Storage Temperature SOT-23 1 Base Emitter Collector Value 20 12 50 350 150 -55 ~ 150 Units V mA mW/°C °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Min. BVCBO BVCEO BVEBO ICBO hFE VCE sat VBE sat fT Cob hfe NF Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Small Signal Current Gain Noise Figure Power Gain IC=0.01mA, IE=0 IC=3mA, IB=0 IE=0.01mA, IC=0 VCB=15V, IE=0 VCE=1V, IC=3mA IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=6V, IC=5mA, f=100MHz VCB=10V, IE=0, f=0.1MHz to 1MHz VCE=6V, IC=2mA, f=1KHz VCE=6V, IC=1.5mA, f=200MHz VCE=6V, IC=5mA, f=200MHz Max. Units V µA Marking 2002 Fairchild Semiconductor Corporation KST5179 Package Dimensions |
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