KST4124MTF
KST4124MTF Datasheet
KST4124
| Part | Datasheet |
|---|---|
KST4124MTF |
KST4124MTF (pdf) |
| PDF Datasheet Preview |
|---|
| KST4124 KST4124 General Purpose Transistor 1 SOT-23 Base Emitter Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current Collector Dissipation TSTG Storage Temperature • Refer to KST3904 for graphs Value 30 25 5 200 350 150 Units V mA mW °C Electrical Characteristics Ta=25°C unless otherwise Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain VCE sat VBE sat fT * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product IC=10µA, IE=0 IC=1.0mA, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VEB=3V, IC=0 VCE=1V, IC=2mA VCE=1V, IC=50mA IC=50mA, IB=5.0mA IC=50mA, IB=5.0mA IC=10mA, VCE=20V f=100MHz Output Capacitance Noise Figure VCB=5V, IE=0, f=1.0MHz IC=100µA, VCE=5V f=10Hz to 15.7KHz * Pulse Test Duty Min. Max. Units Marking 2000 Fairchild Semiconductor International KST4124 Package Demensions SOT-23 0.97REF |
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