KST4123MTF
KST4123MTF Datasheet
KST4123
| Part | Datasheet |
|---|---|
KST4123MTF |
KST4123MTF (pdf) |
| PDF Datasheet Preview |
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| KST4123 KST4123 General Purpose Transistor SOT-23 1 Base Emitter Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TSTG RTH j-a Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Thermal Resistance junction to Ambient Value 40 30 5 200 350 150 357 Units V mA mW °C °C/W Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC=10µA, IE=0 BVCEO * Collector-Emitter Breakdown Voltage IC=1mA, IE=0 BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 ICBO Collector Cut-off Current VCB=20V, IE=0 IEBO Emitter Cut-off Current VEB=3V, IC=0 * DC Current Gain VCE=1V, IC=2mA VCE=1V, IC=50mA VCE sat * Collector-Emitter Saturation Voltage IC=50mA, IB=5mA VBE sat * Base-Emitter Saturation Voltage IC=50mA, IB=5mA Current Gain Bandwidth Product VCE=20V, IC=10mA, f=100MHz Input Capacitance VBE=0.5V, IC=0, f=100KHz Output Capacitance VCB=5V, IE=0, f=100KHz |
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