KST24
Part | Datasheet |
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KST24MTF (pdf) |
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KST24 KST24 VHF Mixer Transistor SOT-23 1 Base Emitter Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current Collector Power Dissipation TSTG Storage Temperature RTH j-a Thermal Resistance Junction to Ambient • Refer to KSP24 for graphs Value 40 30 4 100 350 150 357 Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Min. Typ. BVCBO BVCEO BVEBO ICBO hFE fT Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain * Current Gain Bandwidth Product IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=15V, IE=0 VCE=10V, IC=8mA VCE=10V, IC=8mA f=100MHz 40 30 4 Output Capacitance VCB=10V, IE=0, f=1MHz Conversion Gain 213MHz to 45MHz IC=8mA, VCC=20V 60MHz to 45MHz Oscillator Injection=150mV 24 * Pulse Test Duty 24 29 Units V mA mW °C °C/W Max. 50 Units V nA Marking 2002 Fairchild Semiconductor Corporation |
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