KSP25/26/27
Part | Datasheet |
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KSP27TA (pdf) |
Related Parts | Information |
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KSP26TA |
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KSP25TA |
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KSP27BU |
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KSP25BU |
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KSP26BU |
PDF Datasheet Preview |
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KSP25/26/27 KSP25/26/27 Darlington Transistor • Collector-Emitter Voltage VCES=KSP25 40V KSP26 50V KSP27 60V • Collector Power Dissipation PC max =625mW TO-92 Emitter Base Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCES Collector-Emitter Voltage KSP25 KSP26 KSP27 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 40 50 60 10 500 625 150 -55~150 Units V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCES Collector-Emitter Breakdown Voltage KSP25 KSP26 KSP27 IC=100µA, IE=0 BVCBO Collector-Base Breakdown Voltage KSP25 KSP26 KSP27 IC=100µA, IE=0 ICBO IEBO hFE Collector Cut-off Current KSP25 KSP26 KSP27 Emitter Cut-off Current * DC Current Gain VCE sat * Collector-Emitter Saturation Voltage VBE on * Base-Emitter On Voltage * Pulse Test Duty VCE=30V, IE=0 VCE=40V, IE=0 VCE=50V, IE=0 VEB=10V, IB=0 VCE=5V, IC=10mA VCE=5V, IC=100mA IC=100mA, IB=0.1mA VCE=5V, IC=100mA Min. 40 50 60 40 50 60 Max. Units |
More datasheets: SG6S009V1A1R400 | MAXREFDES114D# | MAXREFDES114B# | MAXREFDES114C# | MAXREFDES114A# | IAD170P | IAD170PTR | CA3102R16S-5SBF80 | KSP26TA | KSP25TA |
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